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Browsing by Author "Lu B.-Z"

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    A 17.7-42.9-GHz Low Power Low Noise Amplifier with 83% Fractional Bandwidth for Radio Astronomical Receivers in 65-nm CMOS
    (2020)
    Chang K.-C
    ;
    Lu B.-Z
    ;
    Wang Y
    ;
    Chiong C.-C
    ;
    HUEI WANG  
    ;
    Chang K.-C;Lu B.-Z;Wang Y;Chiong C.-C;Wang H.
    A 17.7-42.9-GHz low-power CMOS low noise amplifier (LNA) for radio astronomical receivers in 65-nm CMOS technology is presented in this paper. Based on several bandwidth enhancement techniques, the proposed LNA achieves high gain, good noise Figure simultaneously in a wide frequency range while consuming low power. The LNA achieves the 20.1-dB peak gain, and the noise Figure (NF) between 2.8 and 4.3 dB within the 3-dB bandwidth covering 17.7 to 42.9 GHz. The dc power consumption of this design is only 18 mW, while the OP1dB is 2.2 dBm at 28GHz. The figure-of-merit (FOM) of this work is 19 GHz/mW, which reveals the competitiveness among published K-band and Ka-band LNAs. The whole chip occupies 0.45 mm2 including pads. ? 2020 IEEE.
    conference paper
      3Scopus© Citations 6
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    A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications
    (2021)
    Lu B.-Z
    ;
    Wang Y
    ;
    Huang Z.-J
    ;
    Lin K.-Y
    ;
    HUEI WANG  
    ;
    KUN-YOU LIN  
    ;
    Lu B.-Z;Wang Y;Huang Z.-J;Lin K.-Y;Wang H.
    A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G communications is presented in this paper. This PA is a differential pair topology consisted of two common-source cells. The harmonic-tuned network is constructed to enhance the efficiency. The proposed Class-F PA achieves a 12-dB small-signal gain with 7.4-GHz 3-dB bandwidth (25.1-32.5 GHz), saturated output power (Psat) of 14.9 dBm with 43.8 % peak PAE, and output 1-dB compression point (OP1dB) of 14.0 dBm with 42.0 % PAE1dBat 28 GHz. With the modulation measured results using the single-carrier 64-QAM signal, this PA achieves 2.1/4.2 Gb/s data rate, 10.6-dBm/8.1-dBm average output power, and 29.5%/22.6% average PAE, while maintaining root-mean-square (rms) error vector magnitude (EVM) better than-25 dB. Among all the published mm-Wave CMOS PAs, this PA shows outstanding large-signal performances and exceptional modulation capability. ? 2021 EuMA.
    conference paper
      1Scopus© Citations 4
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    A 40-nm CMOS mixer with 36-GHz if bandwidth and 60-148 GHz RF passband
    (2019)
    Wu Y.-C
    ;
    Hwang Y.-J
    ;
    Chiong C.-C
    ;
    Lu B.-Z
    ;
    HUEI WANG  
    An innovative mixing unit of the proposed mixer named JIM (Joint-Injection-Mixing) featured wide IF and RF bandwidths is proposed. The JIM mixer is designed to cover RF frequency range of 60 GHz to 148 GHz and IF frequency range of dc to 36 GHz. The LO driving power of JIM mixer is 0 dBm with dc power consumption of 2 mW. The conversion gain (CG) of JIM mixer is from-8 dB to-14 dB. The JIM mixer in this work is implemented for fundamental mixing as down-conversion. By utilizing the proposed balun, the LO-to-RF isolation of JIM mixer achieves at least 40 dB. The process fabricated for JIM mixer is 40nm CMOS. The chip sizes excluding and including pads are 0.144 mm2 and 0.22 mm2, respectively. The proposed JIM mixer features the state-of-the-art mixer in terms of IF with the widest bandwidth. ? 2019 IEEE.
    conference paper
      1Scopus© Citations 2
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    A 78-93 GHz Power Amplifier with 19.6-dBm Psat and 12.8 % PAEpeak in 0.1-μm GaAs pHEMT for Radio Astronomical Receiver System
    (2019)
    Lu B.-Z
    ;
    Wu Y.-C
    ;
    Chiong C.-C
    ;
    Wang H.
    ;
    HUEI WANG  
    A W-band power amplifier (PA) for radio astronomical receiver LO chain in 0.1-μm GaAs pHEMT technology is presented in this paper. This PA is a 3-stage common source design using transmission lines to implement matching network. In order to increase the bandwidth, two sections matching networks for output are utilized to maintain the matching loci within the Q = 1 contour of Smith chart. A 90 degrees Lange coupler is employed to enhance the bandwidth and to combine the output power. The chip size with all pads is 2×1.5 mm2. From the measurement results, the proposed PA achieves 11.5-dB small signal gain with 15-GHz 3-dB bandwidth (78-93 GHz), saturated output power (Psat) of 19.6 dBm, output 1-dB compression point (OP1dB) of 18.2 dBm, and maximum power added efficiency (PAEpeak) of 12.8%. ? 2019 IEEE.
    conference paper
      2Scopus© Citations 5
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    A Compact 38-54 GHz Sub-Harmonic Mixer with Improved Linearity in 65-nm CMOS
    (2019)
    Jiang Z.-Y
    ;
    Lu B.-Z
    ;
    Wang Y
    ;
    HUEI WANG  
    This paper presents a 38-54 GHz sub-harmonic up-conversion mixer in 65 nm CMOS process using derivative superposition third-order transconductance cancellation technique. The measurement results demonstrate-2.5 dB conversion gain and-11.7 dBm OP1dB at IF input frequency of 100 MHz and RF frequency of 41 GHz with relatively low power. The 3-dB RF bandwidth covers 38 to 54 GHz. The dc power consumption of the mixer is 8.5 mW. The improvement of OIP3 is 4 dB (from 0 to 4 dBm). The chip area of the proposed mixer is 0.8 × 0.55 mm2. ? 2019 IEEE.
    conference paper
      1Scopus© Citations 6
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    An Innovative Joint-Injection Mixer with Broadband if and RF for Advanced Heterodyne Receivers of Millimeter-Wave Astronomy
    (2020)
    Wu Y.-C
    ;
    Hwang Y.-J
    ;
    Chiong C.-C
    ;
    Lu B.-Z
    ;
    HUEI WANG  
    An innovative mixing unit of the proposed mixer named joint-injection-mixer (JIM) features both wide IF and RF bandwidths (BWs) for next-generation advanced heterodyne receivers of millimeter-wave astronomy. This proposed mixer demonstrates an RF frequency range from 60 to 148 GHz and an IF frequency range from dc to 36 GHz. The dc power consumption of the JIM mixer is 2 mW with LO driving power of 0 dBm. All the measured results are under 0-dBm LO power. The conversion gain (CG) of the JIM mixer is from -8 to -14 dB. The JIM mixer in this work is implemented for fundamental mixing as downconversion. By utilizing the proposed modified Marchand balun with ultrabroad BW, the LO-to-RF isolation of the JIM mixer achieves better than 40 dB from 60 to 140 GHz. The fabricated process for the JIM mixer is the 40-nm CMOS process. The chip sizes, excluding and including pads, are 0.144 and 0.22 mm2, respectively. The proposed JIM mixer features the state-of-the-art mixer with the widest IF BW compared with all the prior works. Compared with the present capability of world-leading receivers for radio astronomy, the 36-GHz IF BW of the mixer in this work can construct a next-generation receiver for astronomy to provide received data rate by at least three times. ? 1963-2012 IEEE.
    journal article
      2Scopus© Citations 10
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    A Submilliwatt K-Band Low-Noise Amplifier for Next Generation Radio Astronomical Receivers in 65-nm CMOS Process
    (2020)
    Lu B.-Z
    ;
    Wang Y
    ;
    Wu Y.-C
    ;
    Chiong C.-C
    ;
    HUEI WANG  
    An ultralow-power K-band low-noise amplifier (LNA) for next generation radio astronomical receivers fabricated in 65-nm CMOS technology is presented in this letter. A gate-source transformer feedback is utilized for the simultaneous noise and impedance matching. In order to achieve high gain with limited dc power consumption (P dc), a single-ended neutralization technique is applied to the circuit. According to measurement, the proposed K-band LNA achieves a 19.1-dB small signal gain with 2.8-GHz 3-dB bandwidth (21.2-24 GHz) and noise figure of 3.6 dB with only 0.99 mW P dc. To the best of author's knowledge, this LNA shows the highest figure of merit (FoM), which is 7071 1/W, among published K-band low-power LNAs. ? 2001-2012 IEEE.
    journal article
    Scopus© Citations 22

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