公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Ultrafast transport dynamics of p-i-n photodetectors under high power illumination | Sun, C.-K.; Tan, I-H.; Bowers, J. E. | IEEE Photonic Technology Letters | | | |
2004 | Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes | Gan, K.-G.; Sun, C.-K.; DenBaars, S. P.; Bowers, J. E. | Applied Physics Letters | | | |
2002 | Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors | Gan, K.-G.; Shi, J.-W.; Chen, Y.-H.; Sun, C.-K.; Chiu, Y.-J.; Bowers, J. E. | Applied Physics Letters | | | |
2002 | Ultrahigh-power-bandwidth product and nonlinear photoconductance performances of low-temperature-grown GaAs-based metal-semiconductor-metal traveling-wave photodetectors | Shi, J.-W.; Gan, K.-G.; Chen, Y.-H.; Sun, C.-K.; Chiu, Y.-J.; Bowers, J. E. | IEEE Photonic Technology Letters | | | |
1997 | Well-width dependent studies of InGaN/GaN single-quantum-well using time-resolved photoluminescence techniques | Sun, C.-K.; Keller, S.; Chiu, T.-L.; G. Wang, Minsky, M. S.; DenBaars, S. P.; Bowers, J. E. | IEEE Journal of Selected Topics in Quantum Electronics | | | |