| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2005 | 2 μm emission from Si/Ge heterojunction LED and up to 1.55 μm detection by GOI detectors with strain-enhanced features | Liao, M.H.; CHEE-WEE LIU et al. | International Electron Devices Meeting, IEDM | | | |
| 2008 | 2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions | Liao, M.H.; Cheng, T.-H.; Liu, C.W.; Yeh, L.; Lee, T.-L.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 22 | 19 | |
| 2015 | The ?3 กั 10 20 cm -3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing | Huang, S.-H.; Lu, F.-L.; Huang, W.-L.; Huang, C.-H.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 35 | 31 | |
| 1998 | 300 Mb/s BiCMOS EPR4 read channel for magnetic hard disks | Leung, M.; CHEE-WEE LIU et al. | IEEE International Solid-State Circuits Conference | | | |
| 2013 | 3C-, 4H- and 6H-SiC bulks studied by silicon k-edge X-ray absorption | Zheng, W.; Feng, Z.C.; Zheng, R.S.; Jang, L.-Y.; Liu, C.W.; CHEE-WEE LIU | Materials Science Forum | 1 | 0 | |
| 2012 | 4H-SiC wafers studied by X-ray absorption and Raman scattering | Xu, Q.; CHEE-WEE LIU et al. | Materials Science Forum | 1 | 0 | |
| 2020 | 600 meV Effective Work Function Tuning by Sputtered WNxFilms | Tsai, C.-E.; Huang, C.-H.; Chen, Y.-R.; Tu, C.-T.; Huang, Y.-S.; Liu, C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | 0 | 0 | |
| 2012 | A compact analytic model of the strain field induced by through silicon vias | Jan, S.-R.; Chou, T.-P.; Yeh, C.-Y.; Liu, C.W.; Goldstein, R.V.; Gorodtsov, V.A.; Shushpannikov, P.S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 17 | 16 | |
| 2009 | A comprehensive study of Ge<inf>1-x</inf>Si<inf>x</inf> on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage | Luo, G.-L.; CHEE-WEE LIU et al. | International Electron Devices Meeting, IEDM | 3 | 0 | |
| 2001 | A comprehensive study of inversion current in MOS tunneling diodes | Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 35 | 33 | |
| 2009 | A design of 1T memory cells using channel traps for long data retention time | Chen, Y.-T.; Huang, C.-F.; Sun, H.-C.; Wu, T.-Y.; Ku, C.-Y.; Liu, C.W.; Hsu, Y.-C.; Chen, J.-S.; CHEE-WEE LIU | 2009 International Semiconductor Device Research Symposium | 0 | 0 | |
| 2003 | A high efficient 820 nm MOS Ge quantum dot photodetector | Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 58 | 47 | |
| 2003 | A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor | Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 39 | 33 | |
| 2008 | A new NBTI characterization method on polycrystalline silicon thin-film transistors | Sun, H.-C.; Huang, C.-F.; Chen, Y.-T.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | IDW '08 - 15th International Display Workshops | | | |
| 2001 | A novel illuminator design in a rapid thermal processor | Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | IEEE Transactions on Semiconductor Manufacturing | 6 | 0 | |
| 2011 | A parameterized SPICE macromodel of resistive random access memory and circuit demonstration | Chang, H.-L.; Li, H.-C.; Liu, C.W.; Chen, F.; Tsai, M.-J.; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 5 | 0 | |
| 2001 | A PMOS tunneling photodetector | Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 27 | 20 | |
| 2012 | A transition of three to two dimensional Si growth on Ge (100) substrate | Tu, W.-H.; Lee, C.-H.; Chang, H.T.; Lin, B.-H.; Hsu, C.-H.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU | Journal of Applied Physics | 4 | 6 | |
| 2020 | Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2 | Fan S.-T; Chen Y.-W; Chen P.-S; Liu C.W.; CHEE-WEE LIU | 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 | 0 | 0 | |
| 2005 | Abnormal hole mobility of biaxial strained Si | Liao, M.H.; Chang, S.T.; Lee, M.H.; Maikap, S.; CHEE-WEE LIU ; MING-HAN LIAO | Journal of Applied Physics | 19 | 20 | |
