| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2020 | The 2020 UV emitter roadmap | Amano, H.; Collazo, R.; De Santi, C.; Einfeldt, S.; Funato, M.; Glaab, J.; Hagedorn, S.; Hirano, A.; Hirayama, H.; Ishii, R.; Kashima, Y.; Kawakami, Y.; Kirste, R.; Kneissl, M.; Martin, R.; Mehnke, F.; Meneghini, M.; Ougazzaden, A.; Parbrook, P.J.; Rajan, S.; Reddy, P.; R?mer, F.; Ruschel, J.; Sarkar, B.; Scholz, F.; Schowalter, L.J.; Shields, P.; Sitar, Z.; Sulmoni, L.; Wang, T.; Wernicke, T.; Weyers, M.; Witzigmann, B.; Wu, Y.-R.; Wunderer, T.; Zhang, Y.; YUH-RENN WU | Journal of Physics D: Applied Physics | 185 | 173 | |
| 2019 | 3D Self-Consistent Quantum Transport Simulation for GaAs Gate-All-Around Nanowire Field-Effect Transistor with Elastic and Inelastic Scattering Effects | Hsiao, H.-W.; Wu, Y.-R.; YUH-RENN WU | Physica Status Solidi (A) Applications and Materials Science | 4 | 4 | |
| 2010 | A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method | Lu, I. Lin; Wu, Yuh-Renn; Singh, Jasprit; YUH-RENN WU | Journal of Applied Physics | 0 | 0 | |
| 2010 | Abnormal polarization switching phenomenon in a-plane Al(x)Ga(1-x)N | Huang, Huei-Min; Huang, Hung-Hsun; Wu, Yuh-Renn; Lu, Tien-Chang; YUH-RENN WU | Optics Express | 4 | 3 | |
| 2020 | AlGaN-based deep ultraviolet light emitting diodes with magnesium delta-doped AlGaN last barrier | Wang T.-Y; Lai W.-C; Sie S.-Y; Chang S.-P; Wu Y.-R; Chiou Y.-Z; Kuo C.-H; Sheu J.-K.; YUH-RENN WU | Applied Physics Letters | 12 | 10 | |
| 2020 | Analysis and Optimization of GaN Based Multi-Channels FinFETs | Yu, C.-L.; Lin, C.-H.; Wu, Y.-R.; YUH-RENN WU | IEEE Transactions on Nanotechnology | 6 | 6 | |
| 2022 | Analysis of Light-Emission Polarization Ratio in Deep-Ultraviolet Light-Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k·p Method | Shen H.-T; Chang Y.-C; Wu Y.-R.; YUH-RENN WU | Physica Status Solidi - Rapid Research Letters | 0 | 0 | |
| 2008 | Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar | Wu, Yuh-Renn ; Ferguson, Ian T.; Taguchi, Tsunemasa; Yu, Peichen; Chiu, C. H.; Ashdown, Ian E.; Park, Seong-Ju; Chang, Cheng-Yu; Kuo, H. C. | Eighth International Conference on Solid State Lighting | 1 | 0 | |
| 2020 | Analysis of the hysteresis effect in Perovskite solar cells for the traditional and inverted architectures | Chang E.-W; Huang J.-Y; Wu Y.-R.; YUH-RENN WU | Conference Record of the IEEE Photovoltaic Specialists Conference | 1 | 0 | |
| 2016 | Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model | Kuan-Ying Ho; Chi-Kang Li; Hong-Jhang Syu; Yi Lai; Ching-Fuh Lin; Yuh-Renn Wu; CHING-FUH LIN | Journal of Applied Physics | 11 | 10 | |
| 2020 | Analysis of the triplet exciton transfer mechanism at the heterojunctions of organic light-emitting diodes | Huang, J.-Y.; Wang, M.-T.; Chen, G.-Y.; Li, J.-Y.; Chen, S.-P.; Lee, J.-H.; Chiu, T.-L.; Wu, Y.-R.; YUH-RENN WU ; JIUN-HAW LEE | Journal of Physics D: Applied Physics | 4 | 3 | |
| 2012 | Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure | Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; Speck, James S.; YUH-RENN WU | Applied Physics Letters | 102 | 93 | |
| 2020 | Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system | Tsai, T.-Y.; Michalczewski, K.; Martyniuk, P.; Wu, C.-H.; YUH-RENN WU ; CHAO-HSIN WU | Journal of Applied Physics | 10 | 10 | |
| 2014 | Atomic-scale nanofacet structure in semipolar (20(2)over-bar1) and (20(2)over-bar1) InGaN single quantum wells | Zhao, Yuji; Wu, Feng; Yang, Tsung-Jui; Wu, Yuh-Renn; Nakamura, Shuji; Speck, James S.; YUH-RENN WU | Applied Physics Express | 15 | 16 | |
| 2020 | Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes | Lynsky, C.; Alhassan, A.I.; Lheureux, G.; Bonef, B.; Denbaars, S.P.; Nakamura, S.; Wu, Y.-R.; Weisbuch, C.; Speck, J.S.; YUH-RENN WU | Physical Review Materials | 15 | 14 | |
| 2020 | Bistriazoles with a biphenyl core derivative as an electron-favorable bipolar host of efficient blue phosphorescent organic light-emitting diodes | Lee, J.-H.; Chen, C.-H.; Lin, B.-Y.; Lan, Y.-H.; Huang, Y.-M.; Chen, N.-J.; Huang, J.-J.; Volyniuk, D.; Keruckiene, R.; Grazulevicius, J.V.; Wu, Y.-R.; Leung, M.-K.; Chiu, T.-L.; YUH-RENN WU | ACS Applied Materials and Interfaces | 6 | 6 | |
| 2021 | Calculation of field dependent mobility in MoS2and WS2with multi-valley monte carlo method | Chen P.-F; Wu Y.-R.; YUH-RENN WU | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 3 | 0 | |
| 2007 | Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures | Yang, SY; Zhan, Q; Yang, PL; Cruz, MP; Chu, YH; Ramesh, R; Wu, YR; Singh, J; Tian, W; Schlom, DG; YUH-RENN WU | Applied Physics Letters | 55 | 46 | |
| 2012 | Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells | Lang, J. R.; Young, N. G.; Farrell, R. M.; Wu, Y. -R.; Speck, J. S.; YUH-RENN WU | Applied Physics Letters | 70 | 62 | |
| 2014 | Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics | Chen, Ting-Gang; Yu, Peichen; Chen, Shih-Wei; Chang, Feng-Yu; Huang, Bo-Yu; Cheng, Yu-Chih; Hsiao, Jui-Chung; Li, Chi-Kang; Wu, Yuh-Renn; YUH-RENN WU | Progress in Photovoltaics | 58 | 50 | |
