| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2012 | 064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2 | Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG | Journal of the Physical Society of Japan | | | |
| 2008 | 1 nm equivalent oxide thickness in Ga 2 O 3 (Gd 2 O 3)/In 0.2 Ga 0.8 As metal-oxide-semiconductor capacitors | Shiu, KH; Chiang, TH; Chang, P; Tung, LT; Hong, M; Kwo, J; Tsai, W; MINGHWEI HONG | Applied Physics Letters | | | |
| 2008 | 1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors | Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG | Applied Physics Letters | 51 | 43 | |
| 1994 | 40-mW focused light spot from zone laser and parameters affecting its performance | Vakhshoori, D; Asom, M; Hong, M; Leibenguth, RE; Wynn, JD; Mannaerts, JP; Kojima, K; MINGHWEI HONG | Conference on Lasers and Electro-Optics | | | |
| 2003 | 4E709A, Connell Four Drive, Berkeley Heights, NJ 07922 | Epitaxy, Molecular Beam; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | Crystalline oxide-silicon heterostructures and oxide optoelectronics 2002 | | | |
| 1994 | 980 nm and 850 nm zone lasers | Vakhshoori, Daryoosh; Wynn, James D; Hong, Minghwei; Asom, Moses; Kojima, Keisuke; MINGHWEI HONG | 14th IEEE International Semiconductor Laser Conference, 1994 | | | |
| 1993 | 980 nm zone lasers [InGaAs quantum wells] | Vakhshoori, D; Hong, M; Asom, M; Kojima, K; Leibenguth, RE; Wynn, JD; MINGHWEI HONG | International Electron Devices Meeting, 1993 | | | |
| 1993 | 980nm Zone Lasers | Vakhshoori, D; Hong, M; Asom, M; Kojima, K; MINGHWEI HONG | IEEE International Electron Devices Meeting | | | |
| 2000 | A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs | Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG | IEEE/Cornell Conference on High Performance Devices, 2000 | 5 | | |
| 1997 | A Ga 2 O 3 passivation technique compatible with GaAs device processing | Hong, M; Passlack, M; Mannaerts, JP; Harris, TD; Schnoes, ML; Opila, RL; Krautter, HW; MINGHWEI HONG | Solid-State Electronics | | | |
| 2018 | A new stable, crystalline capping material for topological insulators | Lin, H.Y.; Cheng, C.K.; Chen, K.H.M.; Tseng, C.C.; Huang, S.W.; Chang, M.T.; Tseng, S.C.; Hong, M.; MINGHWEI HONG ; CHIA-KUEN CHENG | APL Materials | 6 | 6 | |
| 2007 | A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics | Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG | Journal of Crystal Growth | | | |
| 2007 | A novel approach of using a MBE template for ALD growth of high-庥 dielectrics | Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG | Journal of Crystal Growth | 9 | 9 | |
| 2006 | A Novel Template Approach by MBE for ALD Growth of High k Dielectrics | Lee, KY; Lee, WC; Hung, ML; Lee, YC; Chang, CH; Chiou, YK; Hong, M; Kwo, J; MINGHWEI HONG | APS Meeting Abstracts | | | |
| 1991 | A periodic index separate confinement heterostructure quantum well laser | Wu, MC; Chen, YK; Hong, M; Mannaerts, JP; Chin, MA; Sergent, AM; MINGHWEI HONG | Applied Physics Letters | | | |
| 1991 | A simple way to reduce series resistance in p-doped semiconductor distributed Bragg reflectors | Hong, M; Mannaerts, JP; Hong, JM; Fischer, RJ; Tai, K; Kwo, J; V; enberg, JM; Wang, YH; Gamelin, J; MINGHWEI HONG | Journal of Crystal Growth | | | |
| 1987 | A Versatile new Metallo-Organic Spin-on Process for Preparing Superconducting Thin films | Gross, ME; Hong, M; Liou, S; Gallagher, PK; MINGHWEI HONG | MRS Proceedings | | | |
| 2010 | A15 SUPERCONDUCTORS THROUGH DIRECT SOLID-STATE PRECIPITATION: V3Ga AND N63AI | Hong, Minghwei; MINGHWEI HONG | Lawrence Berkeley National Laboratory | | | |
| 1980 | A15 superconductors through direct solid-state precipitation: V/sub 3/Ga and Nb/sub 3/Al | Hong, MINGHWEI; MINGHWEI HONG | | | | |
| 2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As | Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Applied Physics Letter | | | |
