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  1. NTU Scholars
  2. Research Outputs

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Showing results 1 to 20 of 52  next >
Issue DateTitleAuthor(s)SourcescopusWOSFulltext/Archive link
20222D Materials-Based Static Random-Access MemoryLiu C.-J; Wan Y; Li L.-J; Lin C.-P; Hou T.-H; Huang Z.-Y; VITA PI-HO HU Advanced Materials59
20203D integration of vertical-stacking of MoS2and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafersJIUN-YUN LI et al. ; VITA PI-HO HU et al. Technical Digest - International Electron Devices Meeting, IEDM40
2015Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-AssistM.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU IEEE Transactions on Electron Devices148
2018Analysis of heterojunction GaAs1-xSbx/In1-yGayAs tunnel FETs considering line tunnelingWang C.-T; Hu V.P.-H.; VITA PI-HO HU Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 201800
2018Analysis of Negative Capacitance UTB SOI MOSFETs considering Line-Edge Roughness and Work Function VariationChiu P.-C; Hu V.P.-H.; VITA PI-HO HU 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings40
2013Analysis of Single-Trap-Induced Random Telegraph Noise and its Interaction With Work Function Variation for Tunnel FETM.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices5347
2012Analysis of Single-Trap-Induced Random Telegraph Noise on FinFET Devices, 6T SRAM Cell, and Logic CircuitsM.-L. Fan; Y.-N. Chen; P. Su; C.-T. Chuang; VITA PI-HO HU IEEE Transactions on Electron Devices3834
2017Analysis of subthreshold swing and internal voltage amplification for hysteresis-free negative capacitance FinFETsChiu P.-C; Hu V.P.-H.; VITA PI-HO HU 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings50
2018Analysis of switching characteristics for negative capacitance ultra-thin-body germanium-on-insulator MOSFETsP.-C. Chiu; VITA PI-HO HU Japanese Journal of Applied Physics12
2011Analysis of Ultra-Thin-Body SOI Subthreshold SRAM Considering Line-Edge Roughness, Work Function Variation, and Temperature SensitivityM.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU IEEE Journal on Emerging and Selected Topics in Circuits and Systems44
2012Band-to-Band-Tunneling Leakage Suppression for Ultra-Thin-Body GeOI MOSFETs Using Transistor StackingM.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU IEEE Electron Device Letters1310
2019Comparative Analysis of Negative Capacitance Junctionless and Inversion Mode Transistors for Low Power ApplicationsGupta M; Hu V.P.-H.; VITA PI-HO HU 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 201900
2013Comparative Leakage Analysis of GeOI FinFET and Ge Bulk FinFETV. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; VITA PI-HO HU ; V. P.-H. Hu; M.-L. Fan; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices2018
2013Design and Analysis of Robust Tunneling FET SRAMY.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; P. Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Transactions on Electron Devices3529
2019Device Designs and Analog Performance Analysis for Negative-Capacitance Vertical-Tunnel FETLin H.-H; Hu V.P.-H.; VITA PI-HO HU Proceedings - International Symposium on Quality Electronic Design, ISQED30
2018Device Designs of III-V Tunnel FETs for Performance Enhancements through Line TunnelingWang C.-T; Hu V.P.-H.; VITA PI-HO HU 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings40
2020Energy-Efficient Monolithic 3-D SRAM Cell with BEOL MoS<inf>2</inf>FETs for SoC ScalingSu, C.-W.; Lee, Y.-W.; Ho, T.-Y.; Cheng, C.-C.; Chen, T.-C.; Hung, T.Y.-T.; Li, J.-F.; Chen, Y.-G.; Li, L.-J.; VITA PI-HO HU IEEE Transactions on Electron Devices77
2019Evaluation of analog circuit performance for ferroelectric SOI MOSFETs considering interface trap charges and gate length variationsLu Y.-C; Hu V.P.-H.; VITA PI-HO HU 2019 Silicon Nanoelectronics Workshop, SNW 201970
2016Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM ApplicationsC.-H. Yu; M.-L. Fan; K.-C. Yu; Pin Su; C.-T. Chuang; VITA PI-HO HU IEEE Transactions on Electron Devices1617
2014Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist CircuitsY.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU IEEE Journal on Emerging and Selected Topics in Circuits and Systems4135
Showing results 1 to 20 of 52  next >

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

總館學科館員 (Main Library)
醫學圖書館學科館員 (Medical Library)
社會科學院辜振甫紀念圖書館學科館員 (Social Sciences Library)

開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

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    Please represent that the submission is your original work, and that you have the right to grant the rights to upload.
  • 若欲上傳已出版的全文電子檔,可使用Sherpa Romeo網站查詢,以確認出版單位之版權政策。
    Please use Sherpa Romeo to find a summary of permissions that are normally given as part of each publisher's copyright transfer agreement.
  • 網站簡介 (Quickstart Guide)
  • 使用手冊 (Instruction Manual)
  • 線上預約服務 (Booking Service)
  • 方案一:臺灣大學計算機中心帳號登入
    (With C&INC Email Account)
  • 方案二:ORCID帳號登入 (With ORCID)
  • 方案一:定期更新ORCID者,以ID匯入 (Search for identifier (ORCID))
  • 方案二:自行建檔 (Default mode Submission)
  • 方案三:學科館員協助匯入 (Email worklist to subject librarians)
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