公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1993 | Saturation region model for a-Si:H TFTs using a quasi-two-dimensional approach | Chen, S.S.; KuoJB | Electronics Letters | 2 | 1 | |
1999 | Semiconductor R&D in Taiwan | JAMES-B KUO | Association of East Asian Research Universities 1st Microelectronics Workshop | | | |
2009 | Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device | J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO | EUROSOI | | | |
2010 | Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device | H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO | Solid-State Electronics | 1 | 1 | |
2008 | Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device | I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEEE Transactions Electron Devices | 3 | 1 | |
1992 | Simple analytical model for short-channel MOS devices | Chow, H.-C.; Feng, W.-S.; JAMES-B KUO | Circuits, Devices and Systems, IEE Proceedings G | 6 | | |
2003 | SOI CMOS VLSI | JAMES-B KUO | Fellow Series Meeting | | | |
2000 | SPICE compact modeling of PD-SOI CMOS devices | Kuo, J.B.; KuoJB | Electron Devices Meeting, 2000 IEEE Hong Kong | 0 | 0 | |
2007 | STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices | I. Lin; V. Su; J. B. kuo; M. Ma; C. T. Tsai; C. S. Yeh; D. Chen; JAMES-B KUO | IEEE International Semicondcutor Device Research Symp (ISDRS) | 3 | 0 | |
2008 | STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device | H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | IEDMS | | | |
2008 | STI-Induced Mechanical Stress-Related Breakdown Behavior of 40nm PD SOI NMOS Devices | J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | ICSICT | | | |
2008 | STI-Induced Mechanical-Stress-Related Kink Effect of 40nm PD SOI NMOS Devices | I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO | European SOI Conference | | | |
1991 | A structured adaptive neural network for pattern recognition VLSI | Kuo, J.B.; Wong, E.J.; Chen, C.C.; Hsiao, C.C.; KuoJB | IEEE International Sympoisum on Circuits and Systems, 1991 | 0 | 0 | |
2002 | Sub-1V CMOS Large Capacitive-Load Driver Circuit Using Direct Bootstrap Technique for Low-Voltage CMOS VLSI | P. C. Chen; JAMES-B KUO | Electronics Letters | 21 | 19 | |
2018 | A Substrate-Dissipating (SD) Mechanism for a Ruggedness-Improved SOI LDMOS Device | Wang B; Wang Z; Kuo J.B.; JAMES-B KUO | IEEE Journal of the Electron Devices Society | 7 | 6 | |
2014 | Subthreshold Behavior of the SOI NMOS Device Consdiering BJT and DIBL Effects | D. H. Lung; J. B. Kuo; JAMES-B KUO | EUROSOI | | | |
1991 | SUN 4/330工作站, (80-0404-E002-43, BiCMOS元件/電路模擬器) | 郭正邦 | | | | |
1999 | Temperature-Dependent Kink Effect Model for Partially-Depleted SOI NMOS Devices | S. C Lin; JAMES-B KUO | IEEE Transactions on Electron Devices | 32 | 25 | |
2002 | The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure | J. B. Kuo; S. C. Lin; JAMES-B KUO | Hong Kong Electron Devices Meeting | 2 | 0 | |
2008 | Transient Behavior of 40nm PD SOI NMOS Device Considering STI-Induced Mechanical Stress Effects | J. S. Su; J. B. Kuo; JAMES-B KUO | IEDMS | | | |