公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2006 | Reconfigurable SiGe low-noise amplifiers with variable miller capacitance | Yang, Y.-C.; Lee, P.-W.; Chiu, H.-W.; Lin, Y.-S.; Huang, G.-W.; Lu, S.-S.; SHEY-SHI LU | IEEE Transactions on Circuits and Systems I: Regular Papers | 13 | 8 | |
2007 | RFICs on polydimethylsiloxane for flexible electronics applications | SHEY-SHI LU | Electronics Letters | 3 | 1 | |
1999 | S-Band MMIC Amplifier Using Ga0.51In0.49P/GaAs MISFET’s as Active Devices | Lin, Yo-Sheng; Lu, Shey-Shi ; Lan-Hai; Chang, Pei-Zen | Microwave and Optical Technology Letters | 0 | | |
2005 | Scanning Capacitance Microscopy application for bipolar and CMOS doping issues in semiconductor failure analysis | SHEY-SHI LU | Conference Proceedings from the International Symposium for Testing and Failure Analysis | | | |
2003 | Single-voltage-supply operation of Ga0.51In0.49P/AlGaAS/In0.15Ga0.85As PHEMTs with high-power density | SHEY-SHI LU | Microwave and Optical Technology Letters | 0 | 0 | |
1999 | Single-voltage-supply operation of Ga0.51in0.49P/In0.15Ga0.85As insulated-gate FET's for power application | SHEY-SHI LU | IEEE Electron Device Letters | | | |
1992 | Small Offset-Voltage In0.49Ga0.51P/GaAs Double-Barrier Bipolar Transistor | Wu, C.C.; Lu, S.S.; SHEY-SHI LU | IEEE Electron Device Letters | 33 | 28 | |
2005 | Small-signal intrinsic base resistance effect on InP-InGaAs, InGaP-GaAs, and SiGe HBTs | SHEY-SHI LU | Device Research Conference - Conference Digest, DRC | 1 | 0 | |
2006 | Temperature and substrate effects in monolithic RF inductors on silicon with 6-μm-thick top metal for RFIC applications | Chiu, H.-W.; Lin, Y.-S.; Liu, K.; Lu, S.-S.; SHEY-SHI LU | IEEE Transactions on Semiconductor Manufacturing | 3 | 3 | |
2005 | Temperature-dependence of noise figure of monolithic RF transformers on a thin (20μm) silicon substrate | SHEY-SHI LU | IEEE Electron Device Letters | 6 | 6 | |
2004 | Temperature-dependence of noise figure of monolithic RF transformers on a thin (20μm) silicon substrate | Wang, T.; Lin, Y.-S.; Lu, S.-S. | 2004 IEEE Radio and Wireless Conference, RAWCON | | | |
2005 | The determination of S-Parameters from the poles of voltage-gain transfer function for RF IC design | Lu, Shey-Shi ; Lin, Yo-Sheng; Chiu, Hung-Wei; Chen, Yu-Chang; Meng, Chin-Chun | IEEE Transactions on Circuits and Systems I: Regular Papers | 11 | 9 | |
1996 | The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm ≦ t ≦10 nm) grown by GSMBE | Lin, Yo-Sheng; Lu, Shey-Shi | International Semiconductor Conference, 1996 | 0 | 0 | |
1999 | The effect of gate recess profile on device performance of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.2/Ga/sub 0.8/As doped-channel FET's | Lan, H.; Lin, Y.-S.; Meng, C.-C.; Lu, S.-S. | IEEE Transactions on Electron Devices | 23 | 21 | |
2012 | The implementation of polysilicon nanowire based biomolecular sensor system-on-chip | SHEY-SHI LU | Proceedings of the 16th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2012 | | | |
2001 | The origin of the kink phenomenon of transistor scattering parameter $22 | Lu, S.-S.; Meng, C.; Chen, T.-W.; Chen, H.-C.; SHEY-SHI LU | IEEE Transactions on Microwave Theory and Techniques | 79 | 72 | |
2009 | The RF characteristics of micromachined coplanar waveguide in 0.13 μm CMOS technology by CMOS compatible ICP dry etching | Wang, T.; Lu, S.-S.; Lin, Y.-S.; Juang, Y.-Z.; Huang, G.-W.; SHEY-SHI LU | Microwave and Optical Technology Letters | 1 | 1 | |
2003 | Theoretical analysis of the anomalous dips of scattering parameter S22 in deep sub-micrometer MOSFETs | SHEY-SHI LU | Microwave and Optical Technology Letters | 0 | 0 | |
2012 | Transmitter front-end with a new wideband active balun in 65-nm CMOS technology | SHEY-SHI LU | Microwave and Optical Technology Letters | 0 | 0 | |
1999 | Two-dimensional simulation for the GaAs V-groove gate MESFET's | Wang, Y.J.; Lu, S.S.; SHEY-SHI LU | Solid-State Electronics | | | |