公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2013 | GeO<inf>2</inf> passivation for low surface recombination velocity on Ge surface | Chen, Y.-Y.; Chang, H.-C.; Chi, Y.-H.; Huang, C.-H.; Liu, C.W.; CHEE-WEE LIU | IEEE Electron Device Letters | 11 | 11 | |
2012 | Germanium gate-all-around pFETs on SOI | Chang, H.-C.; Hsu, S.-H.; Chu, C.-L.; Chen, Y.-T.; Tu, W.-H.; Sung, P.-J.; Luo, G.-Li.; Yin, Y.-C.; Liu, C.W.; CHEE-WEE LIU | ECS Transactions | 1 | 0 | |
2011 | Germanium oxide passivation for Ge absorber | Chen, Y.-Y.; Chang, W.-C.; Chan, S.T.; Liu, C.W.; CHEE-WEE LIU | IEEE Photovoltaic Specialists Conference | 1 | 0 | |
1994 | Growth and band gap of strained 〈110〉 Si<inf>1-x</inf>Ge <inf>x</inf> layers on silicon substrates by chemical vapor deposition | Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Applied Physics Letters | 27 | 25 | |
2003 | Growth and electrical characteristics of liquid-phase deposited SiO<inf>2</inf> on Ge | Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; Liu, C.W.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | 10 | 9 | |
1997 | Growth and electron effective mass measurements of strained Si and Si0.94Ge0.06 on relaxed Si0.62Ge0.38 buffers grown by rapid thermal chemical vapor deposition | Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
1997 | Growth and electron effective mass measurements of strained Si and Si<inf>0.94</inf>Ge<inf>0.06</inf> on relaxed Si<inf>0.62</inf>Ge<inf>0.38</inf> buffers grown by rapid thermal chemical vapor deposition | Liu, C.W.; Venkataraman, V.; CHEE-WEE LIU | Materials Chemistry and Physics | 4 | 4 | |
1996 | Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates | Liu, C.W.; St. Amour, A.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Magee, C.W.; Eaglesham, D.; CHEE-WEE LIU | Journal of Applied Physics | | | |
1994 | Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor deposition | Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2006 | Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | Semiconductor Science and Technology | 3 | 2 | |
2006 | Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots | Lee, S.W.; Chen, P.S.; Chien, T.Y.; Chen, L.J.; Chia, C.T.; Liu, C.W.; CHEE-WEE LIU | Thin Solid Films | 7 | 8 | |
2004 | The growth of high-quality SiGe films with an intermediate Si layer | Lee, S.W.; Chen, P.S.; Tsai, M.-J.; Chia, C.T.; Liu, C.W.; Chen, L.J.; CHEE-WEE LIU | Thin Solid Films | 9 | 7 | |
2005 | Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer | Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Lee, M.H.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 4 | |
1997 | Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition | Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2010 | Halo profile engineering to reduce Vt fluctuation in high-K/metal-gate nMOSFET | Chen, W.-Y.; Yu, T.-H.; Ohtou, T.; Sheu, Y.-M.; Wu, J.; Liu, C.; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2 | 0 | |
2010 | Hexagonal SiGe quantum dots and nanorings on Si(110) | Lee, C.-H.; Liu, C.W.; Chang, H.-T.; Lee, S.W.; CHEE-WEE LIU | Journal of Applied Physics | 11 | 10 | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2002 | High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm) | Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | | | |
2010 | High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response | Fu, Y.-C.; CHEE-WEE LIU et al. | International Electron Devices Meeting, IEDM | 12 | 0 | |