公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1994 | Growth and photoluminescence of strained 〈 110 〉 Si/Si<inf>1-x</inf>Ge<inf>x</inf>/Si quantum wells grown by rapid thermal chemical vapor deposition | Liu, C.W.; Sturm, J.C.; Lacroix, Y.R.J.; Thewalt, M.L.W.; Perovic, D.D.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2006 | Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs | Chen, P.S.; Lee, S.W.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU | Semiconductor Science and Technology | 3 | 2 | |
2006 | Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots | Lee, S.W.; Chen, P.S.; Chien, T.Y.; Chen, L.J.; Chia, C.T.; Liu, C.W.; CHEE-WEE LIU | Thin Solid Films | 7 | 8 | |
2004 | The growth of high-quality SiGe films with an intermediate Si layer | Lee, S.W.; Chen, P.S.; Tsai, M.-J.; Chia, C.T.; Liu, C.W.; Chen, L.J.; CHEE-WEE LIU | Thin Solid Films | 9 | 7 | |
2005 | Growth of strained Si on high-quality relaxed Si1-x Gex with an intermediate Si1-y Cy layer | Lee, S.W.; Chueh, Y.L.; Chen, L.J.; Chou, L.J.; Chen, P.S.; Lee, M.H.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 4 | |
1997 | Growth of β-SiC on Si and poly-Si on β-SiC by rapid thermal chemical vapor deposition | Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Materials Research Society Symposium | | | |
2010 | Halo profile engineering to reduce Vt fluctuation in high-K/metal-gate nMOSFET | Chen, W.-Y.; Yu, T.-H.; Ohtou, T.; Sheu, Y.-M.; Wu, J.; Liu, C.; CHEE-WEE LIU | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2 | 0 | |
2010 | Hexagonal SiGe quantum dots and nanorings on Si(110) | Lee, C.-H.; Liu, C.W.; Chang, H.-T.; Lee, S.W.; CHEE-WEE LIU | Journal of Applied Physics | 11 | 10 | |
2002 | High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity | Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2002 | High efficient 850 nm and 1,310 nm multiple quantum well SiGe/Si heterojunction phototransistors with 1.25 Plus GHz bandwidth (850 nm) | Pei, Z.; Liang, C.S.; Lai, L.S.; Tseng, Y.T.; Hsu, Y.M.; Chen, P.S.; Lu, S.C.; Liu, C.M.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
1996 | High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques | Madhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C.; CHEE-WEE LIU | Annual Device Research Conference Digest | | | |
2010 | High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response | CHEE-WEE LIU | International Electron Devices Meeting, IEDM | | | |
2017 | High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μa/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2?106, and reduced noise power density using S/D dopant recovery by selective laser annealing | Wong I.-H; Lu F.-L; Huang S.-H; Ye H.-Y; Lu C.-T; Yan J.-Y; Shen Y.-C; Peng Y.-J; Lan H.-S; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 4 | 0 | |
2011 | High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate | Tang, S.-H.; Chang, E.Y.; Hudait, M.; Maa, J.-S.; Liu, C.-W.; Luo, G.-L.; Trinh, H.-D.; Su, Y.-H.; CHEE-WEE LIU | Applied Physics Letters | 33 | 30 | |
2002 | High Throughput UHV/CVD SiGe and SiGe:C Process for sige HBT and strained Si FET | Chen, P.S.; Tseng, Y.T.; Tsai, M.-J.; Liu, C.W.; CHEE-WEE LIU | 2002 Semiconductor Manufacturing Technology Workshop, SMTW 2002 | 2 | 0 | |
2005 | High-linearity and temperature-insensitive 2.4 GHz SiGe power amplifier with dynamic-bias control | Hua, Wei-Chun; Lai, Hung-Hui; Lin, Po-Tsung; Liu, Chee Wee; Yang, Tzu-Yi; Ma, Gin-Kou; CHEE-WEE LIU | IEEE Radio Frequency Integrated Circuits Symposium | 26 | 0 | |
2016 | High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential | Lu, T.M.; Laroche, D.; Huang, S.-H.; Chuang, Y.; CHEE-WEE LIU ; JIUN-YUN LI | Scientific Reports | 2 | 2 | |
2017 | High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness | CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2021 | Highly Stacked 8 Ge0.9Sn0.1 Nanosheet pFETs with Ultrathin Bodies (3nm) and Thick Bodies ((30nm) Featuring the Respective Record ION/IOFF of 1.4x107 and Record ION of 92?A at VOV=VDS=-0.5V by CVD Epitaxy and Dry Etching | Tsai C.-E; Liu Y.-C; Tu C.-T; Huang B.-W; Jan S.-R; Chen Y.-R; Chen J.-Y; Chueh S.-J; Cheng C.-Y; Tsen C.-J; Ma Y; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 8 | 0 | |
2021 | Highly Stacked GeSi Nanosheets and Nanowires by Lowerature Epitaxy and Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Huang B.-W; Cheng C.-Y; Chueh S.-J; Chen J.-Y; Liu C.W.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | 5 | 6 | |