公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | PMOS Hole Mobility Enhancement Through SiGe Conductive Channel and Highly Compressive ILD- SiNx Stressing Layer | Liao, Wen-Shiang; Liaw, Yue-Gie; Tang, Mao-Chyuan; Chen, Kun-Ming; Huang, Sheng-Yi; Peng, C.-Y.; Liu, Chee Wee | IEEE Electron Device Letters | | | |
2008 | PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiN<inf>x</inf> stressing layer | CHEE-WEE LIU ; Liao, W.-S.; Liaw, Y.-G.; Tang, M.-C.; Chen, K.-M.; Huang, S.-Y.; Peng, C.-Y.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2008 | Polarity change of threshold voltage shifts for n-channel polycrystalline silicon thin-film transistors stressed by negative gate bias | CHEE-WEE LIU ; Huang, C.-F.; Yang, Y.-J.; Peng, C.-Y.; Sun, H.-C.; Liu, C.W.; Hsu, Y.-C.; Shih, C.-C.; Chen, J.-S.; CHEE-WEE LIU | ECS Transactions | | | |
2004 | Post deposition annealing effects on the reliability of ALD HfO<inf>2</inf> films on strained-Si<inf>0.8</inf>Ge<inf>0.2</inf> layers | CHEE-WEE LIU ; Tzeng, P.J.; Maikap, S.; Lai, W.Z.; Liang, C.S.; Chen, P.S.; Lee, L.S.; CHEE-WEE LIU | International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | | | |
2017 | Process simulation of pulsed laser annealing on epitaxial Ge on Si | CHEE-WEE LIU ; Lu C.-T; Lu F.-L; Tsai C.-E; Huang W.-H; CHEE-WEE LIU | ECS Journal of Solid State Science and Technology | | | |
2008 | Process strain induced by nickel germanide on (100) Ge substrate | CHEE-WEE LIU ; Peng, C.-Y.; YI-HSUAN YANG ; Lin, C.-M.; Yang, Y.-J.; Huang, C.-F.; CHEE-WEE LIU | International Conference on Solid-State and Integrated Circuits Technology, ICSICT | | | |
1992 | Quantum confinement effects in strained silicon-germanium alloy quantum wells | CHEE-WEE LIU ; Xiao, X.; Liu, C.W.; Sturm, J.C.; Lenchyshyn, L.C.; Thewalt, M.L.W.; Gregory, R.B.; Fejes, P.; CHEE-WEE LIU | Applied Physics Letters | | | |
2019 | Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system | CHEE-WEE LIU ; Melnikov, M.Y.; Shashkin, A.A.; Dolgopolov, V.T.; Zhu, A.Y.X.; Kravchenko, S.V.; Huang, S.-H.; CHEE-WEE LIU | Physical Review B | | | |
2013 | Radiation impact of EUV on high-performance Ge MOSFETs | CHEE-WEE LIU ; Chen, Y.-T.; Chang, H.-C.; Wong, I.-H.; Sun, H.-C.; Ciou, H.-J.; Yeh, W.-T.; Luo, S.-J.; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2003 | Radiative and nonradiative recombinations in efficient light-emitting metal-oxide-silicon tunneling diodes | Chen, M.-J.; Chang, J.-F.; Liang, E.-Z.; Lin, C.-F.; Liu, C.W.; CHING-FUH LIN ; CHEE-WEE LIU ; MIIN-JANG CHEN | Proceedings of SPIE - The International Society for Optical Engineering | 0 | 0 | |
2012 | Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si | Feng, Z.C.; Chen, C.; Xu, Q.; Mendis, S.P.; Jang, L.-Y.; Tin, C.-C.; Lee, K.-Y.; Liu, C.W.; Wu, Z.; KUNG-YEN LEE ; CHEE-WEE LIU | Materials Science Forum | 1 | 0 | |
2012 | Reabsorption effects of direct band emission of Ge | CHEE-WEE LIU ; Chen, Y.-Y.; Nien, Y.-H.; Chi, Y.-H.; CHEE-WEE LIU | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | | | |
2013 | Realizing high-efficiency omnidirectional n-type Si solar cells via the hierarchical architecture concept with radial junctions | CHEE-WEE LIU | ACS Nano | | | |
2004 | Recessed oxynitride dots on self-assembled Ge quantum dots grown by LPD | CHEE-WEE LIU ; Kuo, P.-S.; Hsu, B.-C.; Chen, P.-W.; Chen, P.S.; CHEE-WEE LIU | Electrochemical and Solid-State Letters | | | |
2017 | Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs | CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | Record Low Contact Resistivity (4.4¡?10<sup>-10</sup> £[-cm<sup>2</sup>) to Ge Using In-situ B and Sn Incorporation by CVD with Low Thermal Budget (?400¢XC) and Without Ga | CHEE-WEE LIU ; Lu, F.-L.; Tsai, C.-E.; Huang, C.-H.; Ye, H.-Y.; Lin, S.-Y.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2020 | Record Low Contact Resistivity to Ge:B (8.1*10-10Omega-cm-2) and GeSn:B (4.1*10-10Omega-cm-2) with Optimized [B] and [Sn] by In-situ CVD Doping | CHEE-WEE LIU ; Lu F.-L; Liu Y.-C; Tsai C.-E; Ye H.-Y; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2011 | Recovery of light induced degradation of micromorph solar cells by reverse bias | CHEE-WEE LIU ; Sun, H.-C.; Chen, W.-D.; Cheng, T.H.; Yang, Y.-J.; Liu, C.W.; Shih, H.-T.; CHEE-WEE LIU | ECS Transactions | | | |
2001 | Reduced temperature dependence of luminescence from silicon due to field-induced carrier confinement | Lin, Ching-Fuh ; Chen, Miin-Jang ; Liang, Eih-Zhe; Liu, W. T.; CHEE-WEE LIU | Applied Physics Letters | 3 | 3 | |
2008 | Reduction of crosstalk between dual power amplifiers using laser treatment | CHEE-WEE LIU ; Chang, H.-L.; Kuo, P.-S.; Hua, W.-C.; Lin, C.-P.; Lin, C.-Y.; CHEE-WEE LIU | IEEE Microwave and Wireless Components Letters | | | |