Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2014 | Fabrication and characterization of Cu(In,Ga)Se<inf>2</inf> p-channel thin film transistors | CHEE-WEE LIU ; Zhu, X.; CHEE-WEE LIU | Applied Physics Letters | | | |
2014 | Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs | CHEE-WEE LIU ; Wong, I.-H.; Chen, Y.-T.; Yan, J.-Y.; Ciou, H.-J.; Chen, Y.-S.; CHEE-WEE LIU | IEEE Transactions on Electron Devices | | | |
2008 | Fano interference in the quantum wellquantum dot system | CHEE-WEE LIU ; Abramov, A.A.; Lin, C.-H.; CHEE-WEE LIU | International Journal of Nanoscience | | | |
2018 | Ferroelectric Al:HfO <inf>2</inf> negative capacitance FETs | Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H. ; Li, K.-S.; CHEE-WEE LIU | International Electron Devices Meeting | 22 | 0 | |
2006 | Field-emission properties of self-assembled Si-capped Ge quantum dots | CHEE-WEE LIU ; Lee, S.W.; Chueh, Y.L.; Chen, H.C.; Chen, L.J.; Chen, P.S.; Chou, L.J.; CHEE-WEE LIU | Thin Solid Films | | | |
2018 | Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Utilizing Voltage-Controlled Magnetic Anisotropy Pulse Width Optimization. | CHEE-WEE LIU ; Luo, Zong-You; Tsou, Ya-Jui; Dong, Yi-Cheng; Lu, Ching; CHEE-WEE LIU | Non-Volatile Memory Technology Symposium, NVMTS 2018, Sendai, Japan, October 22-24, 2018 | | | |
2020 | First Demonstration of 4-Stacked Ge0.915Sn0.085 Wide Nanosheets by Highly Selective Isotropic Dry Etching with High S/D Doping and Undoned Channels | CHEE-WEE LIU ; Huang Y.-S; Lu F.-L; Tu C.-T; Chen J.-Y; Tsai C.-E; Ye H.-Y; Liu Y.-C; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2023 | First Demonstration of a-IGZO GAA Nanosheet FETs Featuring Achievable SS=61mV/dec,Ioff<-7μA/μm, DIBL =44mV/V, Positive VT, and Process Temp. of 300 °C | Chiu, Jih Chao; Sarkar, Eknath; Liu, Yuan Ming; Chen, Yu Ciao; Fan, Yu Cheng; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
2022 | First Demonstration of Monolithic 3D Self-aligned GeSi Channel and Common Gate Complementary FETs by CVD Epitaxy Using Multiple P/N Junction Isolation | Tu, Chien Te; Liu, Yi Chun; Huang, Bo Wei; Chen, Yu Rui; Hsieh, Wan Hsuan; Tsai, Chung En; Chueh, Shee Jier; Cheng, Chun Yi; Ma, Yichen; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | 1 | 0 | |
2023 | First Demonstration of Monolithic Self-aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched VT by Band Alignments of Individual Channels | Tu, Chien Te; Hsieh, Wan Hsuan; Chen, Yu Rui; Huang, Bo Wei; Liao, Yu Tsung; WEI-JEN CHEN; Liu, Yi Chun; Cheng, Chun Yi; Chou, Hung Chun; Lu, Hao Yi; Hsin, Cheng Hsien; He, Geng Min; Woo, Dong Soo; Chueh, Shee Jier; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2021 | First Demonstration of Multi-VT Stacked Ge0.87Sn0.13 Nanosheets by Dipole-Controlled ALD WNxCy Work Function Metal with Low Resistivity and Thermal Budget ≤ 400 ℃ | Tsai C.-E; Chen Y.-R; Tu C.-T; Liu Y.-C; Chen J.-Y; CHEE-WEE LIU | | 0 | 0 | |
2020 | First demonstration of uniform 4-Stacked Ge0.9Sn0.1nanosheets with record ION =73μA at VOV=VDS= -0.5V and low noise using double Ge0.95Sn0.05caps, dry etch, low channel doping, and high S/D doping | CHEE-WEE LIU ; Huang Y.-S; Tsai C.-E; Tu C.-T; Chen J.-Y; Ye H.-Y; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2021 | First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching | Liu Y.-C; Tu C.-T; Tsai C.-E; Chen Y.-R; Chen J.-Y; Jan S.-R; Huang B.-W; Chueh S.-J; Tsen C.-J; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 3 | | |
2019 | First Stacked Ge0.88Sn0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at VOV=VDS= -0.5V, Record Gm,max of 172μS at VDS= -0.5V, and Low Noise | CHEE-WEE LIU ; Huang Y.-S; Tsai C.-E; Tu C.-T; Ye H.-Y; Liu Y.-C; Lu F.-L; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2023 | First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles | Chen, Yu Rui; Liu, Yi Chun; Zhao, Zefu; Hsieh, Wan Hsuan; Lee, Jia Yang; Tu, Chien Te; Huang, Bo Wei; Wang, Jer Fu; Chueh, Shee Jier; Xing, Yifan; Chen, Guan Hua; Chou, Hung Chun; Woo, Dong Soo; Lee, M. H.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | 0 | 0 | |
2018 | First vertically stacked GeSn nanowire pGAAFETs with Ion = 1850μA/μm (VOV = VDS = -1V) on Si by GeSn/Ge CVD epitaxial growth and optimum selective etching | CHEE-WEE LIU ; Huang Y.-S; Lu F.-L; Tsou Y.-J; Tsai C.-E; Lin C.-Y; Huang C.-H; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | First Vertically Stacked Tensily Strained Ge0.98Si0.02 nGAAFETs with No Parasitic Channel and LG = 40 nm Featuring Record ION = 48 μa at VOV=VDS=0.5V and Record Gm,max(μS/μm)/SSSAT(mV/dec) = 8.3 at VDS=0.5V | CHEE-WEE LIU ; Tu C.-T; Huang Y.-S; Lu F.-L; Liu H.-H; Lin C.-Y; Liu Y.-C; CHEE-WEE LIU | Technical Digest - International Electron Devices Meeting, IEDM | | | |
2019 | First Vertically Stacked, Compressively Strained, and Triangular Ge<inf>0.91</inf>Sn<inf>0.09</inf> pGAAFETs with High ION of 19.3£gA at VOV=VDS=-0.5V, Gm of 50.2£gS at VDS=-0.5V and Low SSlin of 84mV/dec by CVD Epitaxy and Orientation Dependent Etching | CHEE-WEE LIU ; Huang, Y.-S.; Ye, H.-Y.; Lu, F.-L.; Liu, Y.-C.; Tu, C.-T.; Lin, C.-Y.; Lin, S.-H.-Y.; Jan, S.-R.; CHEE-WEE LIU | Digest of Technical Papers - Symposium on VLSI Technology | | | |
2012 | First-principles study of Ge dangling bonds with different oxygen backbonds at Ge/GeO <inf>2</inf> interface | CHEE-WEE LIU ; Chang, H.-C.; Lu, S.-C.; Chou, T.-P.; Lin, C.-M.; CHEE-WEE LIU | Journal of Applied Physics | | | |
2012 | First-principles study of GeO <inf>2</inf>/Ge interfacial traps and oxide defects | CHEE-WEE LIU ; Lu, S.-C.; Chang, H.-C.; Chou, T.-P.; CHEE-WEE LIU | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | | | |