公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2010 | Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE | T. C. Ma; Y. T. Lin; HAO-HSIUNG LIN | 16th international conference on crystal growth (ICCG-16) | | | |
2006 | Effects of thermal annealing on the energy gap of GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | International electron devices and materials symposia | | | |
1993 | Effects of Two-Photon Transition on Femtosecond Pulse Propagation in Multiple Quantum Well Waveguides | Yang, C. C.; Villeneuve, A.; Stegeman, G. I.; Lin, C. H.; 林浩雄 ; Lin, Hao-Hsiung | Integrated Photonics Research Topical Meeting | | | |
2007 | Efficient generation of coherent acoustic phonons in (111) InGaAs/GaAs MQWs through piezoelectric effects | Y. C. Wen; L. C. Chou; H. H. Lin; V. Gusev; K. H. Lin; CHI-KUANG SUN ; HAO-HSIUNG LIN ; CHI-KUANG SUN | Applied Physics Letters | | | |
2006 | Electric vertically coupled quantum dots grown by molecular beam epitaxy | Y. R. Lin; J. S. Wang; HAO-HSIUNG LIN | OPT2006 | | | |
2018 | Electrical Properties of Bismuth Thin Films Analyzed by Transmis-sion Line method | Xinyou Liu; Yen-Cheng Ko; Chieh Chou; Hao-Hsiung Lin; HAO-HSIUNG LIN | International Electron Devices & Materials Symposium IEDMS2018 | | | |
2008 | Electro-modulation enhancement in the InGaNAs/GaAs quantum well structures | J. R. Lee; C. R. Lu; H. L. Liu; L. W. Sung; HAO-HSIUNG LIN | Physica Status Solidi (C) Current Topics in Solid State Physics | 0 | 0 | |
2012 | Electron transport in a GaPSb film | S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; CHI-TE LIANG ; HAO-HSIUNG LIN | Nanoscale Research Letters | | 5 | |
2012 | Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs | Y. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; HAO-HSIUNG LIN | Applied Physics Letters | | | |
2008 | Energy gap reduction in dilute nitride GaAsSbN | Lin, Yan-Ting; Ma, Ta-Chun; Chen, Tsung-Yi; Lin, Hao-Hsiung | Applied Physics Letters | 49 | 44 | |
2008 | Energy gap reduction in GaAsSbN | Y. T. Lin; T. C. Ma; S. P. Wang; HAO-HSIUNG LIN | Applied Physics Letters | | 44 | |
1987 | Engineering on AlGaAs Double Heterojunction Bipolar Transistors | Chen, C. Z.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Advanced Semiconductor Processing Technologies | | | |
1995 | Erratum: Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance" (Applied Physics Letters (1995) 66 (2543)) | YANG-FANG CHEN ; Shen, J.L.; Dai, Y.D.; Jan, G.J.; HAO-HSIUNG LIN | Applied Physics Letters | 0 | 0 | |
1986 | Evalution of DX-Center in Sn-Doped AlxGa1-xAs | Lee, H. C.; Lee, Si-Chen ; Lin, Hao-Hsiung ; Hwang, F. C. | The 12th EDMS | | | |
2012 | Evidence of nitrogen reorganization in GaAsSbN alloys | H. P. Hsu; Y. T. Lin; HAO-HSIUNG LIN | Japanese Journal of Applied Physics. | | 7 | |
2019 | Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition | Lin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung-Yi; Horng, Ray Hua; Cheng, Li-Chung; Talwar, Devki N.; Lin, Hao Hsiung; Lee, Jyh-Fu; Feng, Zhe Chuan; Wan, Lingyu; HAO-HSIUNG LIN | Journal of Crystal Growth | | | |
1981 | Excess Leakage Current of a Rectifier Diode | Pai, P. L.; Hwang, C. C.; Chen, M. K.; 林浩雄 ; Chiou, Y. L.; Lin, Hao-Hsiung | 7th EDMS | | | |
2011 | Extended X-ray absorption fine structure of InAsPSb | C. J. Wu; G. Tsai; Z. C. Feng; HAO-HSIUNG LIN | 23rd international conference on indium phosphide and related materials (IPRM 2011) | | | |
2011 | Extended X-ray absorption fine structure study on InP0.52Sb0.48/GaAs | C. J. Wu; K. T. Chen; Z. C. Feng; HAO-HSIUNG LIN | 38th international symposium on compound semiconductors (ISCS 2011) | | | |
1998 | An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor | Tsai, Jung-Hui; Cheng, Shiou-Ying; Laih, Lih-Wen; Liu, Wen-Chau; Lin, Hao-Hsiung | Superlattices and Microstructures | 7 | 7 | |