Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2001 | Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells | G. R. Chen; H. H. Lin; J. S. Wang; D. K. Shih; HAO-HSIUNG LIN | Journal of Applied Physics | | 3 | |
2010 | Optical properties of As-rich InAsSb/InAsPSb multiple quantum well | C. J. Wu; G. Tsai; HAO-HSIUNG LIN | MBE Taiwan 2010 | | | |
2003 | Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy | G. R. Chen; H. H. Lin; J. S. Wang; D. K. Shih; HAO-HSIUNG LIN | Journal of Electronic Materials | | 7 | |
2003 | Optical Properties of InAs1–xNx/In0.53Ga0.47As Single Quantum Wells Grown by Gas Source Molecular Beam Epitaxy | Chen, Guan-Ru; Lin, Hao-Hsiung ; Wang, Jyh-Shyang; Shih, Ding-Kang | Journal of Electronic Materials | | | |
2006 | Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy | D. L. Wang; G. Tsai; C. J. Wu; C. E. Wu; F. Tseng; HAO-HSIUNG LIN | OPT2006 | | | |
2008 | Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers | Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; HAO-HSIUNG LIN | Journal of Physics and Chemistry of Solids | 1 | 1 | |
2003 | Optical Studies of InAs/GaAs and Ge/Si Quantum Dot Structures | Jan, G.J.; Lai, C.M.; Chang, F.Y.; Perng, Y.H.; Chang, C.W.; Kao, C.H.; Jan, I.C.; HAO-HSIUNG LIN | Proceedings of SPIE - The International Society for Optical Engineering | | | |
2003 | Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells | T. T. Chen; C. H. Chen; W. Z. Cheng; W. S. Su; M. H. Ya; Y. F. Chen; P. W. Liu; HAO-HSIUNG LIN ; YANG-FANG CHEN | Journal of Applied Physics | | 15 | |
2009 | Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures | P. Sitarek; H. P. Hsu; Y. S. Huang; J. M. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | Journal of Applied Physics. | | 8 | |
2010 | Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy | H. P. Hsu; Y. S. Huang; Y. T. Lin; H. H. Lin; K. K. Tiong; HAO-HSIUNG LIN | Materials Chemistry and Physics | | 7 | |
2013 | Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering | B. W. Wang; C. J. Hong-Liao; H. H. Lin; Z. C. Feng; HAO-HSIUNG LIN | International electron devices and materials symposium | | | |
2014 | Ordering InGaP epilayer grown on Ge substrate | H. M. Wu; S. J. Tsai; Y. C. Chang; Y. R. Chen; HAO-HSIUNG LIN | Thin Solid Films | | | |
2011 | Orentation dependent phase separation in GaAsSb | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | 2011 AVS international plasma workshop on processing and characterization of advanced materials | | | |
2012 | Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy | Y. R. Chen; L. C. Chou; Y. J. Yang; HAO-HSIUNG LIN | Thin solid film | | 4 | |
1984 | Origin of high offset voltage in an AlGaAs/GaAs heterojunction bipolar transistor | Lee, S.-C.; Kau, J.-N.; SI-CHEN LEE ; HAO-HSIUNG LIN | Applied Physics Letters | 73 | 67 | |
1985 | The Origin of High Offset Voltage in Heterojunction Bipolar Transistor | 李嗣涔 ; Kau, J. N.; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Applied Physics Letters | | | |
2008 | Origin of the annealing-induced blue-shift in GaAsSbN | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | | | |
2007 | Origin of the annealing-induced blue-shift in GaAsSbN bulk layers | Y. T. Lin; T. C. Ma; T. Y. Chen; HAO-HSIUNG LIN | OPT2007 | | | |
1990 | P-Al0.2Ga0.8As/n-Al0.05Ga0.95As/Au Schottky Collector Heterojunction Bipolar Transistor with a Design of High Bandgap Extrinsic Base | Chen, M. C.; 林浩雄 ; Lin, Hao-Hsiung | 1990 International Electron Devices and Materials Symposium | | | |
1994 | P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature | Tsai, H.H.; Su, Y.K.; Wang, R.L.; Lin, H.H.; Lee, T.L.; HAO-HSIUNG LIN | IEEE Electron Device Letters | | | |