公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species | Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN | 2009 International electron devices and materials symposia | | | |
2003 | A study of optical properties of InGaAs/GaAs quantum dots | C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN | Journal of the Korean Physical Society | | | |
2012 | A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells | H. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN | International electron devices and materials symposium | | | |
2006 | A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy | J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN | OPT2006 | | | |
1999 | Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance | YANG-FANG CHEN ; D. Y. Lin; Y. S. Huang; M. C. Chen; HAO-HSIUNG LIN ; JEN-CHEN FAN | Journal of Applied Physics | 3 | 3 | |
1989 | Abrupt heterointerfaces in Al <inf>0.35</inf> Ga <inf>0.65</inf> As/Al <inf>0.05</inf> Ga <inf>0.95</inf> As/Al <inf>0.35</inf> Ga <inf>0.65</inf> As quantum well structure grown by liquid-phase epitaxy | Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of Applied Physics | 5 | 3 | |
1990 | Abrupt Heterointerfaces in Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy | Chen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Applied Physics | | | |
1989 | Abrupt Heterointerfaces in Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy | Chen, J. A.; Lee, J. H.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | Journal of Appllied Physics | | | |
1985 | An AIGaAs/GaAs oxide-stripe double-heterostructure laser | Shieh, M.-H.; Lin, H.-H.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
1985 | AIGaAs/GaAs V-groove channeled substrate buried heterostructure laser diodes | Chen, J.-A.; Lee, S.-C.; SI-CHEN LEE ; HAO-HSIUNG LIN | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
2001 | Al <inf>x</inf>Ga <inf>1-x</inf>) <inf>0.5</inf>In <inf>0.5</inf>P /In <inf>0.15</inf>Ga <inf>0.85</inf>As (x = 0, 0.3, 1.0) Heterostructure doped-channel FETs for microwave power applications | Yang, S.-C.; Chiu, H.-C.; Chan, Y.-J.; Lin, H.-H.; Kuo, J.-M.; HAO-HSIUNG LIN | IEEE Transactions on Electron Devices | 7 | 6 | |
1988 | Al0.35Ga0.65As/Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy | Chen, J. A.; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | The 1988 International Electronic Devices and Materials Symposium | | | |
2008 | AlGaAs Ambient Light Detectors With a Human-Eye Spectral Response | Lin, Tzu-Chiang; Ma, Ta-Chun; Lin, Hao-Hsiung | IEEE Photonics Technology Letters | 2 | 2 | |
1994 | AlGaAs for Nonlinear Optics at 1550 nm | Villeneuve, A.; Aitchison, J. S.; Al-Hemyari, K.; Ironside, C. N.; Yang, C. C.; Lin, C. H.; 林浩雄 ; Stegeman, G. I.; Lin, Hao-Hsiung | SPIE's 1993 Quebec International Symposium on Holography, Microstructure, and Laser Technologies | | | |
1984 | An AlGaAs-GaAs dual Wavelength Photodetector with 500 埃 Resolution | 李嗣涔 ; 林浩雄 ; Chiou, Y. L.; Lee, Si-Chen ; Lin, Hao-Hsiung | Solid State Electronics | | | |
1983 | AlGaAs-GaAs Dual-Wavelength Photodetectors for WDM Technologies | Lee, Si-Chen ; Lin, Hao-Hsiung | 9th EDMS | | | |
1993 | AlGaAs/GaAs Heterojunction Bipolar Transistor on GaAs(111) Substrate by Molecular Beam Epitaxy | Lee, T. L.; Chu, W. D.; 林浩雄 ; Lin, Hao-Hsiung | 19th EDMS | | | |
1990 | AlGaAs/GaAs Heterojunction Bipolar Transistors | Lin, Hao-Hsiung | The 6th RSA/ROC Binational Symposium, Electronic Materials and Devices | | | |
1991 | AlGaAs/GaAs Heterojunction Bipolar Transistors with High Current Gain Grown by Molecular Beam Epitaxy | Wu, Chien-Hsing; 李嗣涔 ; 林浩雄 ; Lee, Si-Chen ; Lin, Hao-Hsiung | 17th EDMS | | | |
1985 | AlGaAs/GaAs Oxide-Stripe Double-Heterostructure Lasers | Shieh, M. H.; 林浩雄 ; 李嗣涔 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Lee, Si-Chen | Journal of Chinese Institute Engineers | | | |