公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1989 | Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-Edge-Thinning Design | Ting, Jing-Lung; 林浩雄 ; 李嗣涔 ; Lin, Hao-Hsiung ; Lee, Si-Chen | 15th EDMS | | | |
2003 | Femtosecond carrier dynamics in InGaAsN single quantum well | Hsieh, C.-L.; Liu, T.-M.; Tien, M.-C.; Sung, L.-W.; Sun, Chi-Kuang ; Lin, Hao-Hsiung | CLEO/Pacific Rim 2003 | 0 | 0 | |
2018 | First attempt to identify site occupation preference coefficients of a quaternary alloy: The InAs<inf>x</inf>P<inf>y</inf>Sb<inf>1-x-y</inf> system | Robouch, B.V.; Lin, H.-H.; Valeev, R.G.; Trigub, A.L.; Omar, J.; Kisiel, A.; Marcelli, A.; HAO-HSIUNG LIN | Journal of Alloys and Compounds | 2 | 2 | |
1983 | The Forward Characterization of 50 Amperes Power Rectifier | Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 9th EDMS | | | |
Dec | A fully integrated broadband amplifier with 161% 3-dB bandwidth | Wu, Wen-Chieh; Wang, Huei; Lin, Hao-Hsiung | Asia-Pacific Microwave Conference, 2001. APMC 2001 | 0 | 0 | |
2009 | GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer | Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN | Applied Physics Letters | 2 | 2 | |
2000 | GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer | Lee, Ching-Ting; Shyu, Kuo-Chuan; Lin, Iang-Jeng; Lin, Hao-Hsiung | Materials Science and Engineering B | 2 | 1 | |
2002 | GaAs monolithic 1.5 to 2.8 GHz tunable ring oscillator withaccurate quadrature outputs | Wu, Wen-Chieh; Lin, Hao-Hsiung | Electronics Letters | | | |
2002 | GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs | W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN | Electronics Letters | 1 | 1 | |
2009 | GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer | Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN | Electronics Letters | 8 | 7 | |
2013 | GaAsPSb and its application to heterojunction bipolar transistors | Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN | 40th international symposium on compound semiconductors (ISCS 2013) | | | |
2005 | GaAsSb/GaAs quantum wells grown by MBE | H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
2003 | GaAsSb/GaAs type-II quantum well and its application on /spl sim/1.3 /spl mu/m laser | Lin, Hao-Hsiung ; Liu, Po-Wei; Chen, Jhe-Ren | Optoelectronics | 0 | 0 | |
2003 | GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser | H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN | Sixth Chinese Optoelectronics Symposium | 0 | 0 | |
2003 | GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers | H. H. Lin,; P. W. Liu,; G. H. Liao,; HAO-HSIUNG LIN | electron devices and materials symposium | | | |
2004 | GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes | H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN | MBE Taiwan | | | |
2007 | GaAsSb/GaAs量子結構與元件(2/2) | 林浩雄 | | | | |
2006 | GaAsSbN grown on GaAs by gas source molecular beam epitaxy | T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |
2008 | GaAsSbN/GaAs long wavelength PIN detectors | C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | 4 | 0 | |
1995 | Gas Source MBE Growth of InP Under In-Rich Conditions | Lee, T. L.; Liu, J. S.; 林浩雄 ; Lin, Hao-Hsiung | 1994 International Electron Devices and Materials Symposium | | | |