公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2017 | Enhancement of Light-to-Dark Current Ratio via Coupling Effect for MIS (p) Tunnel Diode Photo Sensors | W.T.Hou; W.C.Kao; JENN-GWO HWU | Electrochemical Society Transactions | 2 | 0 | |
2000 | Enhancement of silicon oxidation rate due to tensile mechanical stress | JENN-GWO HWU ; JIA-YUSH YEN | Applied Physics Letters | 38 | 35 | |
2006 | Enhancement of temperature sensitivity for metal-oxide-semiconductor (MOS) tunneling temperature sensors by utilizing hafnium oxide (HfO 2) film added on silicon dioxide (SiO 2) | Wang, T.-M.; Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Sensors Journal | 11 | 11 | |
2017 | Enhancement of Transient Two-States Characteristics in Metal-Insulator-Semiconductor Structure by Thinning Metal Thickness | K.H.Tseng; C.S.Liao; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Nanotechnology | 14 | 15 | |
1989 | Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior | 胡振國 ; Lin, S. T. ; Hwu, Jenn-Gwo | | | | |
1989 | Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors | Hwu, Jenn-Gwo | | | | |
1999 | Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation | Yeh, K.-L.; Jeng, M.-J.; JENN-GWO HWU | Solid-State Electronics | 6 | 4 | |
2014 | Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application | Tseng, P.-H.; Tian, W.-C.; Pan, S.C.; JENN-GWO HWU ; WEI-CHENG TIAN | IEEE Transactions on Nanotechnology | 2 | 2 | |
1983 | The Forward Characterization of 50 Amperes Power Rectifier | Chen, M. K.; Chiou, Y. L.; 林浩雄 ; 胡振國 ; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo | 9th EDMS | | | |
2022 | Fringing field induced current coupling in concentric metal-insulator-semiconductor (MIS) tunnel diodes with ultra-thin oxide | Chen J.-H; Chen K.-C; JENN-GWO HWU | AIP Advances | 1 | 1 | |
1991 | Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments. | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | | | | |
2019 | Gate Oxide Local Thinning Mechanism Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor | C.F.Yang; P.J.Chen; W.C.Chen; K.W.Lin; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 5 | |
2019 | Gate Oxide Local Thinning Mechanism-Induced Sub-60 mV/Decade Subthreshold Swing on Charge-Coupled MIS(p) Tunnel Transistor | Yang, C.-F.; Chen, B.-J.; Chen, W.-C.; Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 5 | |
2004 | Growth-then-anodization technique for reliable ultrathin gate oxides | JENN-GWO HWU | Journal of the Electrochemical Society | 4 | 2 | |
2004 | High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection | JENN-GWO HWU | IEEE Transactions on Electron Devices | 25 | 23 | |
2004 | High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing | JENN-GWO HWU | IEEE Transactions on Electron Devices | 36 | 34 | |
2006 | Impact of strain-temperature stress on ultrathin oxide | Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 4 | |
2018 | Improved C-V Hysteresis &Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | | | |
2018 | Improved C-V Hysteresis &Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | | | |
2018 | Improved C-V Hysteresis and Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |