| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2001 | Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal-oxide-semiconductor structure subjected to substrate injection | Huang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 3 | 3 | |
| 1982 | Breakdown Voltage of Junction Passivated Power Rectifier | 林浩雄 ; Hwang, C. C.; 胡振國 ; Chiou, Y. L.; Lin, Hao-Hsiung ; Hwu, Jenn-Gwo ; Chiou, Y. L. | 8th EDMS | | | |
| 1988 | C-V hysteresis instability in aluminum/tantalum oxide/silicon oxide/silicon capacitors due to postmetallization annealing and Co-60 irradiation | Hwu, Jenn-Gwo; Jeng, Ming-Jer; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 13 | |
| 2021 | Capacitance analysis of transient behavior improved metal-insulator-semiconductor tunnel diodes with ultra thin metal surrounded gate | Huang S.-W; Hwu J.-G.; JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 0 | 0 | |
| 2009 | Characteristics and reliability of hafnium oxide dielectric stacks with room temperature grown interfacial anodic oxide | Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 9 | 9 | |
| 2016 | Characterization of Ambient Light Induced Inversion Current in MOS(n) Tunneling Diode with Enhanced Oxide Thickness Dependent Performance | Y.K.Lin; H.H.Lin; J.G.Hwu*; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2016 | Characterization of Ambient Light Induced Inversion Current in MOS(n) Tunneling Diode with Enhanced Oxide Thickness Dependent Performance | Y.K.Lin; H.H.Lin; J.G.Hwu*; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2015 | Characterization of Ambient Light-Induced Inversion Current in MOS(n) Tunneling Diode With Enhanced Oxide Thickness-Dependent Performance | JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 2 | |
| 2012 | Characterization of edge fringing effect on the C-V responses from depletion to deep depletion of MOS(p) capacitors with ultrathin oxide and high-κ dielectric | JENN-GWO HWU | IEEE Transactions on Electron Devices | 26 | 24 | |
| 2009 | Characterization of stacked hafnium oxide (HfO2) / silicon dioxide (SiO2) metal-oxide-semiconductor (MOS) tunneling temperature sensors | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 1 | 0 | |
| 2010 | Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 9 | 8 | |
| 2009 | Characterization of the electrostatic discharge induced interface traps in metal-oxide-semiconductor field-effect transistors | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE International Reliability Physics Symposium | 1 | 0 | |
| 1990 | Characterization Si02 by DC Resistance Measurement Tehcnique | Hwu, Jenn-Gwo | | | | |
| 1987 | Charge Temperature Effects on Co-60 Irradiated Mos Capacitors | Lee, G. S.; 胡振國 ; 李嗣涔 ; 王維新; 胡振國 ; 李嗣涔 ; Wang, Way-Seen | The 13th EDMS | | | |
| 1987 | Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide | 胡振國 ; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo ; Wang, Way-Seen; Tu, Y. K. | Journal of Applied Physics | | | |
| 1987 | Clockwise C-V hysteresis phenomena of metal-tantalum-oxide-silicon-oxide- silicon ( p) capacitors due to leakage current through tantalum oxide | JENN-GWO HWU | Journal of Applied Physics | 17 | 16 | |
| 1989 | Comparison Between Charge-Temperature and Bias-Temperature Agings | Hwu, Jenn-Gwo | | | | |
| 2009 | Comparison of lateral non-uniformity phenomena between HfO2 and SiO2 from magnified C-V curves in inversion region | Cheng, J.Y.; Huang, C.T.; Lu, H.T.; Hwu, J.G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
| 2006 | Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously | Wang, T.-M.; Chang, C.-H.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 3 | 3 | |
| 2011 | Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Device and Materials Reliability | 12 | 12 | |
