公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2018 | On/off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
1990 | Oxide Resistance Characterization in MOS structures by the Voltage Decay Method | Hwu, Jenn-Gwo ; Ho, I-Hsiu | JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 29 | 3 | | |
2004 | Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current | JENN-GWO HWU | Journal of the Electrochemical Society | 6 | 5 | |
2007 | Oxide-trapped charges induced by electrostatic discharge impulse stress | JENN-GWO HWU | IEEE Transactions on Electron Devices | 10 | 7 | |
2013 | Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale | 14 | 14 | |
1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU | IEE Proceedings, Part G: Circuits, Devices and Systems | | | |
2017 | Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level | Hou, W.-T.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 6 | 5 | |
2018 | Photo Sensitivity Enhanced by the Modulation of Oxide Thickness in MIS(p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
2014 | Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics | Pang, C.-S.; JENN-GWO HWU | AIP Advances | 8 | 7 | |
2012 | Photo-sensitivity enhancement of HfO 2-based MOS photodiode with specific perimeter dependency due to edge fringing field effect | JENN-GWO HWU | IEEE Sensors Journal | 20 | 20 | |
2014 | Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 32 | 29 | |
2011 | Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching | Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | International NanoElectronics Conference, INEC | 0 | 0 | |
1995 | Preparation of fluorinated gate oxides by liquid phase deposition following rapid thermal oxidation | JENN-GWO HWU | Applied Physics Letters | | | |
1997 | Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution | JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 4 | 0 | |
1996 | Process control of rapid thermal N2O-annealed thin gate oxides | Huang, Y.-Z.; Lu, W.-S.; JENN-GWO HWU | Solid-State Electronics | 0 | 0 | |
1993 | Process Dependency of Radiation Hardness of Rapid Thermal Reoxidized Nitrided Gate Oxides | JENN-GWO HWU | IEEE Transactions on Electron Devices | 6 | 6 | |