| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1997 | 17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide | JENN-GWO HWU | IEEE Electron Device Letters | 12 | 7 | |
| 2015 | 2-State current characteristics of MOSCAP with ultrathin oxide and metal gate | JENN-GWO HWU | ECS Solid State Letters | 3 | 3 | |
| 1992 | A Circuit Design for the Improvement of Radiation Hardness in CMOS Digital Circuits | Chen, C.-C.; Liu, S.-C.; Hsiao, C.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Nuclear Science | 15 | 12 | |
| 1995 | A Systematic Study of the Initial Electrical and Radiation Hardness Properties of Reoxidized Nitrided Oxides by Rapid Thermal Processing | JENN-GWO HWU | IEEE Transactions on Nuclear Science | 1 | 1 | |
| 2001 | An on-chip temperature sensor by utilizing a MOS tunneling diode | Shih, Y.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 32 | 27 | |
| 1997 | Analog maximum, median and minimum circuit | JENN-GWO HWU | Proceedings - IEEE International Symposium on Circuits and Systems | | | |
| 1997 | Analog maximum, median and minimum circuit | Liu, Shen-Iuan ; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo | Circuits and Systems, 1997. ISCAS '97. | 0 | 0 |  |
| 2007 | Analysis of constitution and characteristics of lateral nonuniformity effects of MOS devices using QM-based Terman method | JENN-GWO HWU | IEEE Transactions on Electron Devices | 10 | 10 | |
| 1987 | Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo ; Jeng, M. J. | | | | |
| 2001 | Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress | Huang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 4 | 4 | |
| 1998 | Application of anodization followed by rapid thermal treatment to thin gate oxide growth | Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
| 2001 | Application of anodization to reoxidize silicon nitride film | Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
| 1992 | Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors | Lin, Jin-Jenn; Hwu, Jenn-Gwo; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1 | 1 | |
| 1996 | Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics | Lee, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Applied Surface Science | 0 | 0 | |
| 1994 | Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics | Lee, K. C.; 胡振國 ; Hwu, Jenn-Gwo | | | | |
| 1992 | Applications of Rapid Thermal Processing and Radiation Processing on Si Gate Oxides | Hwu, Jenn-Gwo | | | | |
| 2011 | Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides | Chen, K.-M.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
| 1993 | Aspect Ratio Design Consideration for Radiation-Hard CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo ; Jeng, M. J. | | | | |
| 1993 | Aspect ratio design consideration for radiation-hard CMOS inverters | Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation | 0 | 0 | |
| 1995 | Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters | 胡振國 ; Jeng, M. J.; Hwu, Jenn-Gwo | | | | |
