| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2001 | Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress | Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 17 | 18 | |
| 1992 | Dependence of hot-carrier and radiation hardnesses of metal-oxide-semiconductor capacitors on initial oxide resistance determined by charge-then-decay method | Lin, Jing-Jenn; Lin, Kuan-Chin; Hwu, Jenn-Gwo; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2 | 3 | |
| 2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
| 2016 | Depletion Behavior in MIS Tunnel Diode for Sensing Application | J.G.Hwu; C.S.Liao; H.H.Lin; JENN-GWO HWU | WCAM 2016, 5th Annual World Congress of Advanced Materials (Invited Talk) | | | |
| 1994 | Design and Fabrication of Basic Silicon MOS Digital Ciruits | Hwu, Jenn-Gwo | | | | |
| 2012 | Detrapping characteristics of an Al 2O 3/SiO 2/4H-SiC stacked structure with two-state trap-assisted tunnelling current behaviour | JENN-GWO HWU | Journal of Physics D: Applied Physics | 2 | 2 | |
| 2015 | The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films | Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 0 | 0 | |
| 1987 | Direct Indication of Interface Trap States in an Mos Capacitor From the Peaks of Optical illumination-induced Capacitances | JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
| 1986 | Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature technique | Hwu, J.G.; Wang, W.S.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 10 | 9 | |
| 2017 | Double Exponential Mechanism Controlled Transistor | Jenn-Gwo Hwu; Samuel C. Pan; Chien-Shun Liao; JENN-GWO HWU | | | | |
| 2017 | Double Exponential Mechanism Controlled Transistor | Jenn-Gwo Hwu; Samuel C. Pan; Chien-Shun Liao; JENN-GWO HWU | | | | |
| 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
| 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
| 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
| 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Simultaneous Biasing in Two Terminals | C.F.Yang; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | | | |
| 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Two Electrode Terminals Biased with Constant Offset Voltage | C.F.Yang; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2017 | Double Negative Differential Resistance Properties in MISIM Structure with Substrate Grounded and Two Electrode Terminals Biased with Constant Offset Voltage | C.F.Yang; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 1990 | Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments | 胡振國 ; Lin, J. J.; Hwu, Jenn-Gwo | Proceedings of International Electronic Devices and Materials Symposium | | | |
| 2010 | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 0 | 0 | |
| 2020 | Edge-Etched Al<inf>2</inf>O<inf>3</inf>Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor | Chen, B.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 0 | 0 | |
