| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2010 | Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides | Cheng, J.-Y.; Lu, H.-T.; Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | ICSICT-2010 -10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 0 | 0 | |
| 2020 | Edge-Etched Al<inf>2</inf>O<inf>3</inf>Dielectric as Charge Storage Region in a Coupled MIS Tunnel Diode Sensor | Chen, B.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Journal of the Electron Devices Society | 0 | 0 | |
| 1998 | Edge-illuminated metal-oxide-semiconductor (MOS) solar cells with oxides prepared by liquid phase deposition method | Lee, Kuo-Chung; Lin, Jin-Sheng; Hwu, Jenn-Gwo; JENN-GWO HWU | Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an | | | |
| 1985 | The Effect of Charge-Temperature Aging on n-MOSFET | 胡振國 ; Lin, C. M.; 王維新; Hwu, Jenn-Gwo ; Wang, Way-Seen | Proceedings of ROC Electronic Devices and Materials Symposium | | | |
| 2013 | Effect of electrons trapping/de-trapping at Si-SiO2 interface on two-state current in MOS(p) structure with ultra-thin SiO2 by anodization | Chen, T.-Y.; Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 7 | 6 | |
| 1992 | Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo | | | | |
| 1994 | Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo ; Lu, W. S. | | | | |
| 2016 | Effect of Fringing Field on the Electrical Characteristics of MIS Tunnel Diode with Sidewall Passivated Metal Gate | C.J.Chou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
| 2016 | Effect of Fringing Field on the Electrical Characteristics of MIS Tunnel Diode with Sidewall Passivated Metal Gate | C.J.Chou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
| 2013 | Effect of H2O on the electrical characteristics of ultra-thin SiO2 prepared with and without vacuum treatments after anodization | Chen, T.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 6 | 6 | |
| 1986 | Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature technique | Hwu, J.G.; Lin, C.M.; Wang, W.S.; JENN-GWO HWU | Thin Solid Films | 8 | 6 | |
| 2002 | Effect of mechanical stress on characteristics of silicon thermal oxides | Yen, J.-Y.; Huang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
| 1998 | Effect of oxidation pressure on the characteristics of fluorinated thin gate oxides prepared by room temperature deposition followed by rapid thermal oxidation | Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo; JENN-GWO HWU | Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering | | | |
| 1991 | Effect of oxide resistance on the characterization of interface trap density in MOS structures | Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU | Solid State Electronics | 1 | 1 | |
| 2019 | Effect of oxide thickness on the two-state characteristics in MIS(p) tunnel diode with ultrathin metal surrounded gate | Cheng, C.-F.; Yang, Y.-C.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 2 | 3 | |
| 1999 | The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides | Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo ; Wung, Tzong-Shyan | IEEE Transactions on Semiconductor Manufacturing | | |  |
| 1997 | Effect of postoxidation annealing on the reliability of rapid thermal thin gate oxides | JENN-GWO HWU | IEEE Electron Device Letters | 1 | 0 | |
| 1987 | The Effect of Postoxidation Cooling Ambient on Si02 Property | Hwu, Jenn-Gwo | | | | |
| 1992 | Effect of starting oxide on electrical characteristics of metal-reoxidized nitrided oxide-semiconductor devices prepared by rapid thermal processes | Chang-Liao, Kuei-Shu; Hwu, Jenn-Gwo; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 2: Letters | 2 | 0 | |
| 1994 | Effect of starting oxide preparation on electrical properties of reoxidized nitrided and N2O-annealed gate oxides | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers | 2 | 3 | |
