| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2004 | High sensitive and wide detecting range MOS tunneling temperature sensors for on-chip temperature detection | JENN-GWO HWU | IEEE Transactions on Electron Devices | 22 | 23 | |
| 2004 | High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing | JENN-GWO HWU | IEEE Transactions on Electron Devices | 35 | 33 | |
| 2006 | Impact of strain-temperature stress on ultrathin oxide | Tung, C.-W.; Yang, Y.-L.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 4 | 4 | |
| 2018 | Improved C-V Hysteresis &Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | | | |
| 2018 | Improved C-V Hysteresis &Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | | | |
| 2018 | Improved C-V Hysteresis and Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
| 2018 | Improved C-V Hysteresis and Two-States Characteristics in MIS (p) Structure with Elongated Thin Metal Gate | C.T.Lin; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
| 1993 | Improved Gate Oxide Reliability by Repeated N20 Rapid Thermal Annealings | 胡振國 ; Wu, Y. L.; Hwu, Jenn-Gwo ; Wu, Y. L. | | | | |
| 2020 | Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe | Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo ; Wu, Z. Y. | Proceedings of Electronic Devices and Materials Symposium | | | |
| 1993 | Improved Performance of n-MOSFET's with Reoxidized Nitrided Oxide (RNO) by Using N20 as the Reoxidizer | 胡振國 ; Wu, Z. Y.; Wu, Y. L.; Hwu, Jenn-Gwo ; Wu, Y. L. | | | | |
| 2006 | Improvement in electrical characteristics of high- k Al2O 3 gate dielectric by field-assisted nitric oxidation | Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 5 | 5 | |
| 2001 | Improvement in oxide thickness uniformity by repeated spike oxidation | Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 4 | 4 | |
| 1994 | Improvement in radiation hardness of gate oxides in metal-oxide semiconductor devices by repeated rapid thermal oxidations in N2O | JENN-GWO HWU | Applied Physics Letters | 4 | 4 | |
| 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo | | | | |
| 1994 | Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings | 胡振國 ; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo ; Wu, Y. L.; Kuo, K. M. | Proceedings of International Electronic Devices and Materials Symposium | | | |
| 1994 | Improvement in radiation hardness of n-MOSFET's with gate oxides prepared by multiple N<inf>2</inf>O annealings | Wu, Y.-L.; Kuo, K.-M.; Hwu, J.-G.; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | 0 | 0 | |
| 1989 | Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments | Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU | Solid State Electronics | 18 | 22 | |
| 1993 | Improvement in Radiation Hardness of Rapid Thermal Nitrided Oxides by Repeated Irradiation-Then-Anneal Treatments | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo ; Lu, W. S. | | | | |
| 1993 | Improvement in Radiation Hardness of Reoxidized Nitrided Oxide (RNO) in the Absence of Post-Oxidation Anneal | JENN-GWO HWU | IEEE Electron Device Letters | 12 | 11 | |
