| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2016 | Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide | J.Y.Chen; W.C.Kao; J.G.Hwu*; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
| 2016 | Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide | J.Y.Chen; W.C.Kao; J.G.Hwu*; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
| 2008 | Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 11 | 10 | |
| 2006 | Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics | Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 22 | 18 | |
| 2013 | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 11 | 0 | |
| 0 | Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 0 | Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2018 | Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2018 | Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2018 | Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation | Chen Y.-H; Hwu J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 2 | 1 | |
| 2018 | Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 4 | |
| 2018 | Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 5 | 5 | |
| 2016 | Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effec | H.H.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions, | 0 | 0 | |
| 2016 | Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effec | H.H.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions, | 0 | 0 | |
| 2016 | Local Thinning Induced Less Oxide Breakdown in Mos Structures Due to Lateral Non-Uniformity Effect | H.H. Lin; J.G. Hwu; JENN-GWO HWU | PRiME 2016/230th ECS Meeting, G02: Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 | 0 | 0 | |
| 2016 | Local Thinning Induced Less Oxide Breakdown in Mos Structures Due to Lateral Non-Uniformity Effect | H.H. Lin; J.G. Hwu; JENN-GWO HWU | PRiME 2016/230th ECS Meeting, G02: Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 | 0 | 0 | |
| 2002 | Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide | Hong, C.-C.; Chen, W.-R.; Hwu, J.-G.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | | | |
| 2007 | Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation | JENN-GWO HWU | Applied Physics Letters | 10 | 10 | |
| 2009 | Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid | Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 1 | |
| 1996 | Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method | Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU | IEEE Photonics Technology Letters | 6 | 6 | |
