公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2016 | Lateral Non-uniformity Reduction by Compensatory Metal Embedded in MOS Structure with Ultra-Thin Anodic Oxide | J.Y.Chen; W.C.Kao; J.G.Hwu*; JENN-GWO HWU | Electrochemical Society Transactions - Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufactur | 1 | 0 | |
2008 | Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses | Tseng, J.-C.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 11 | 10 | |
2006 | Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics | Huang, S.-W.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 22 | 18 | |
2013 | Lateral nonuniformity of the tunneling current of Al/SiO2/p-Si capacitor in inversion region due to edge fringing field effect | Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 11 | 0 | |
2018 | Light Sensing Enhancement and Energy Saving Improvement in Concentric Double MIS(p) Tunnel Diode Structure with Inner Gate Outer Sensor (IGOS) Operation | Y.H.Chen; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 2 | |
2018 | Light sensing enhancement and energy saving improvement in concentric double-MIS(p) tunnel diode structure with inner gate outer sensor operation | Chen Y.-H; JENN-GWO HWU | IEEE Transactions on Electron Devices | | | |
2018 | Light-to-Dark Current Ratio Enhancement on MIS Tunnel Diode Ambient Light Sensor by Oxide Local Thinning Mechanism and Near Power-Free Neighboring Gate | C.F.Yang; J.G.Hwu; JENN-GWO HWU | IEEE Transactions on Electron Devices | 6 | 6 | |
2016 | Local Thinning Induced Less Oxide Breakdown in MOS Structures Due to Lateral Non-Uniformity Effec | H.H.Lin; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions, | 0 | 0 | |
2002 | Local thinning-induced oxide nonuniformity effect on the tunneling current of ultrathin gate oxide | Hong, C.-C.; Chen, W.-R.; JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 5 | | |
2022 | Local-Oxide-Thinning-Induced Deep Depletion Phenomenon in MOS Capacitors | Lin K.-W; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 1 | 1 | |
2007 | Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation | JENN-GWO HWU | Applied Physics Letters | 10 | 10 | |
2009 | Low temperature tandem aluminum oxides prepared by DAC-ANO compensation in nitric acid | Yang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 1 | |
1996 | Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method | Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU | IEEE Photonics Technology Letters | 7 | 7 | |
2009 | Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 9 | |
2010 | Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material | Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 26 | 24 | |
2017 | Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Samuel C. Pan; Chao-Hsiung Wang; Chi-Wen Liu; JENN-GWO HWU | | | | |
2017 | Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Samuel C. Pan; Chao-Hsiung Wang; Chi-Wen Liu; JENN-GWO HWU | | | | |
2014 | Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode | Lin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 15 | 14 | |
2017 | MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effec | M.H.Yang; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
2007 | Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory | JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |