| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1996 | Metal-oxide-semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method | Shen, Y.-P.; Hwu, J.-G.; JENN-GWO HWU | IEEE Photonics Technology Letters | 6 | 6 | |
| 2009 | Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 11 | 9 | |
| 2010 | Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high- k material | Cheng, J.-Y.; Lu, H.-T.; Hwu, J.-G.; JENN-GWO HWU | Applied Physics Letters | 25 | 23 | |
| 2017 | Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Samuel C. Pan; Chao-Hsiung Wang; Chi-Wen Liu; JENN-GWO HWU | | | | |
| 2017 | Methods of Forming An Interconnect Structure Using A Self-Ending Anodic Oxidation | Jenn-Gwo Hwu; Wei-Cheng Tian; Samuel C. Pan; Chao-Hsiung Wang; Chi-Wen Liu; JENN-GWO HWU | | | | |
| 2014 | Minority carriers induced schottky barrier height modulation in current behavior of metal-oxide-semiconductor tunneling diode | Lin, Y.-K.; Lin, L.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 15 | 14 | |
| 2017 | MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effec | M.H.Yang; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2017 | MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effec | M.H.Yang; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2017 | MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effect | M.H.Yang; J.G.Hwu; JENN-GWO HWU | 231th ECS Meeting | 0 | 0 | |
| 2017 | MIS(p) Saturation Tunneling Current Controlled By Neighboring MIS Inversion Level Via Coupling Effect | M.H.Yang; J.G.Hwu; JENN-GWO HWU | 231th ECS Meeting | 0 | 0 | |
| 2007 | Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory | JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2017 | Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor | T.H.Li; C.S.Liao; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | 1 | 0 | |
| 2017 | Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor | T.H.Lee; C.S.Liao; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
| 2017 | Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor | T.H.Lee; C.S.Liao; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
| 2017 | Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor | T.H.Li; C.S.Liao; J.G.Hwu; JENN-GWO HWU | 232nd ECS Meeting | 1 | 0 | |
| 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
| 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
| 2015 | Negative gate transconductance in MIS tunnel diode induced by peripheral minority carrier control mechanism | JENN-GWO HWU | ECS Transactions | 4 | 0 | |
| 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
| 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
