| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
| 2018 | Negative Differential Resistance Behavior in Coupled MIS(p) Tunnel Diodes | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 201 | | | |
| 2015 | Negative gate transconductance in MIS tunnel diode induced by peripheral minority carrier control mechanism | JENN-GWO HWU | ECS Transactions | 4 | 0 | |
| 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
| 2018 | Negative Transconductance in Coupled MIS(p) Tunnel Diodes with Concentric Gate Structure | J.G.Hwu; C.F.Yang; C.S.Liao; H.W.Lu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
| 1997 | New temperature compensation method for Si wafers in rapid thermal processor using separated Si rings as susceptors | JENN-GWO HWU | Materials Research Society Symposium - Proceedings | | | |
| 2013 | Nitric acid compensated aluminum oxide dielectrics with improved negative bias reliability and positive bias temperature response | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 5 | 5 | |
| 2012 | Non-planar substrate effect on the interface trap capacitance of metal-oxide-semiconductor structures with ultra thin oxides | JENN-GWO HWU | Journal of Applied Physics | 6 | 6 | |
| 2014 | Non-planar substrate metal-oxide-semiconductor photo-capacitance detectors with enhanced deep depletion sensitivity at convex corner | Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 1 | 1 | |
| 2015 | Non-uniform hole current induced negative capacitance phenomenon examined by photo-illumination in MOS(n) | JENN-GWO HWU | ECS Transactions | 2 | 0 | |
| 2001 | Novel ultra thin gate oxide growth technique by alternating current anodization | Hwu, Jenn-Gwo ; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len | 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001 | 0 | 0 |  |
| 2018 | On/off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2018 | On/Off Current Ratio Enhancement By Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
| 2018 | On/Off Current Ratio Enhancement By Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
| 2018 | On/off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
| 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
| 1990 | Oxide Resistance Characterization in MOS structures by the Voltage Decay Method | Hwu, Jenn-Gwo ; Ho, I-Hsiu | JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 29 | | | |
| 1990 | Oxide resistance characterization in MOS structures by the voltage decay method | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 3 | 3 | |
| 2004 | Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current | JENN-GWO HWU | Journal of the Electrochemical Society | 5 | 4 | |
