| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2018 | On/off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2018 | On/Off Current Ratio Enhancement By Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
| 2018 | On/Off Current Ratio Enhancement By Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 0 | 0 | |
| 2018 | On/off Current Ratio Enhancement by Reducing Electrode Separation in Gate-Controlled MIS Tunnel Transistor | C.H.Chan; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
| 2018 | Origin of the Transient Current Peaks in MIS Structures Observed During I-V Measurement | Y.H.Liu; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2018 | | | |
| 1990 | Oxide Resistance Characterization in MOS structures by the Voltage Decay Method | Hwu, Jenn-Gwo ; Ho, I-Hsiu | JAPANESE JOURNAL OF APPLIED PHYSICS Vol. 29 | | |  |
| 1990 | Oxide resistance characterization in MOS structures by the voltage decay method | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 3 | 3 | |
| 2004 | Oxide-thickness-dependent suboxide width and its effect on inversion tunneling current | JENN-GWO HWU | Journal of the Electrochemical Society | 5 | 4 | |
| 2007 | Oxide-trapped charges induced by electrostatic discharge impulse stress | JENN-GWO HWU | IEEE Transactions on Electron Devices | 10 | 7 | |
| 2013 | Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale | 13 | 13 | |
| 1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU | IEE Proceedings, Part G: Circuits, Devices and Systems | | | |
| 2017 | Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level | Hou, W.-T.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 5 | 4 | |
| 2018 | Photo Sensitivity Enhanced By the Modulation of Oxide Thickness in MIS (p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 1 | 0 | |
| 2018 | Photo Sensitivity Enhanced By the Modulation of Oxide Thickness in MIS (p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 1 | 0 | |
| 2018 | Photo Sensitivity Enhanced by the Modulation of Oxide Thickness in MIS(p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
| 2018 | Photo Sensitivity Enhanced by the Modulation of Oxide Thickness in MIS(p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
| 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
| 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
| 2014 | Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics | Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 7 | 6 | |
