| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2013 | Performance enhancement of metal-oxide-semiconductor tunneling temperature sensors with nanoscale oxides by employing ultrathin Al2O3 high-k dielectrics | Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU | Nanoscale | 13 | 13 | |
| 1992 | Performance prediction and function recovery of CMOS circuits damaged by Co-60 irradiation | Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU | IEE Proceedings, Part G: Circuits, Devices and Systems | | | |
| 2017 | Photo response enhancement in MIS(p) tunnel diode via coupling effect by controlling neighboring device inversion level | Hou, W.-T.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 5 | 4 | |
| 2018 | Photo Sensitivity Enhanced By the Modulation of Oxide Thickness in MIS (p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 1 | 0 | |
| 2018 | Photo Sensitivity Enhanced By the Modulation of Oxide Thickness in MIS (p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | 233rd ECS Meeting | 1 | 0 | |
| 2018 | Photo Sensitivity Enhanced by the Modulation of Oxide Thickness in MIS(p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
| 2018 | Photo Sensitivity Enhanced by the Modulation of Oxide Thickness in MIS(p) Structure | H.Y.Chen; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 1 | 0 | |
| 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
| 2016 | Photo Sensitivity Enhancement by Controlling Neighboring Device Inversion Level via Coupling Effect on MIS(p) Tunnel Diodes | W.T.Hou; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016, November 24-25 (Best Paper Award) | | | |
| 2014 | Photo-induced tunneling currents in MOS structures with various HfO 2/SiO2 stacking dielectrics | Pang, C.-S.; Hwu, J.-G.; JENN-GWO HWU | AIP Advances | 7 | 6 | |
| 2012 | Photo-sensitivity enhancement of HfO 2-based MOS photodiode with specific perimeter dependency due to edge fringing field effect | JENN-GWO HWU | IEEE Sensors Journal | 19 | 19 | |
| 2014 | Photosensing by edge schottky barrier height modulation induced by lateral diffusion current in MOS(p) photodiode | Lin, Y.-K.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 31 | 28 | |
| 2011 | Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching | Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU | International NanoElectronics Conference, INEC | 0 | 0 | |
| 1995 | Preparation of fluorinated gate oxides by liquid phase deposition following rapid thermal oxidation | JENN-GWO HWU | Applied Physics Letters | | | |
| 1997 | Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution | JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 4 | 0 | |
| 1996 | Process control of rapid thermal N2O-annealed thin gate oxides | Huang, Y.-Z.; Lu, W.-S.; Hwu, J.-G.; JENN-GWO HWU | Solid-State Electronics | 0 | 0 | |
| 1993 | Process Dependency of Radiation Hardness of Rapid Thermal Reoxidized Nitrided Gate Oxides | JENN-GWO HWU | IEEE Transactions on Electron Devices | 6 | 6 | |
| 2020 | Prolonged Transient Behavior of Ultrathin Oxide MIS-Tunneling Diode Induced by Deep Depletion of Surrounded Coupling Electrode | Hsu, T.-H.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 0 | 0 | |
| 2005 | Quality improvement and electrical characteristics of high-k films after receiving direct superimposed with alternative current anodic oxidation compensation | JENN-GWO HWU | ECS Transactions | 0 | 0 | |
| 2004 | Quality improvement in LPCVD silicon nitrides by anodic and rapid thermal oxidations | JENN-GWO HWU | Electrochemical and Solid-State Letters | 4 | 5 | |
