| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 1986 | Radiation Effects on the Oxide Properties of Silicon MOS Capacitor | 胡振國 ; Lee, G. S.; Jeng, M. J.; 王維新; 李嗣涔 ; Hwu, Jenn-Gwo ; Lee, G. S.; Jeng, M. J.; Wang, Way-Seen; Lee, Si-Chen | Electronic Devices and Materials Symposium | | | |
| 1993 | Radiation Hard Process for Rapid Thermal Reoxidized Nitrided Oxides | Hwu, Jenn-Gwo | | | | |
| 1993 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, G. C.; Hwu, Jenn-Gwo ; Lee, G. C. | | | | |
| 1995 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | 胡振國 ; Lee, K. C.; Hwu, Jenn-Gwo ; Lee, K. C. | | | | |
| 1995 | Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides | JENN-GWO HWU | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an | 0 | 0 | |
| 1994 | Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation | Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | 2 | 0 | |
| 1994 | Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation | Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; SI-CHEN LEE ; JENN-GWO HWU | 1994 International Electron Devices and Materials Symposium, EDMS 1994 | 2 | 0 | |
| 1994 | Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment | Lu, W. S.; 胡振國 ; Chou, J. S.; 李嗣涔 ; Hwu, Jenn-Gwo ; Lee, Si-Chen | 1994 International EDMS | | | |
| 1992 | Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides | 胡振國 ; Lu, W. S.; Hwu, Jenn-Gwo | | | | |
| 1991 | Radiation Reliability of Devices Used in Optical Fiber Communication | Hwu, Jenn-Gwo | | | | |
| 1994 | Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides | 胡振國 ; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo ; Jeng, M. J. | | | | |
| 1996 | Rapid thermal post-metallization annealing effect on thin gate oxides | Jeng, M.-J.; Lin, H.-S.; Hwu, J-G.; JENN-GWO HWU | Applied Surface Science | 4 | 3 | |
| 1995 | Rapid thermal post-metallization annealing in thin gate oxides | JENN-GWO HWU | Japanese Journal of Applied Physics, Part 1: Regular Papers \\& Short Notes \\& Review Papers | 1 | 1 | |
| 1998 | Rapid thermal postoxidation anneal engineering in thin gate oxides with al gates | Chen, C.-Y.; Jeng, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 7 | 6 | |
| 2017 | Rearrangement of Fringing Field By Sidewall Passivated Metal Gate in MIS Tunnel Diode | C.J.Chou; J.G.Hwu; JENN-GWO HWU | 231th ECS Meeting | 0 | 0 | |
| 2017 | Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode | C.J.Chou; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2017 | Rearrangement of Fringing Field By Sidewall Passivated Metal Gate in MIS Tunnel Diode | C.J.Chou; J.G.Hwu; JENN-GWO HWU | 231th ECS Meeting | 0 | 0 | |
| 2017 | Rearrangement of Fringing Field by Sidewall Passivated Metal Gate in MIS Tunnel Diode | C.J.Chou; J.G.Hwu; JENN-GWO HWU | Electrochemical Society Transactions | 0 | 0 | |
| 2002 | Reduction in Leakage Current of Low-Temperature
Thin-Gate Oxide by Repeated Spike
Oxidation Technique | Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo | IEEE ELECTRON DEVICE LETTERS | | |  |
| 2002 | Reduction in leakage current of low-temperature thin-gate oxide by repeated spike oxidation technique | Hong, C.-C.; Chang, C.-Y.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 4 | 3 | |
