| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2016 | Saturation Current Coupling Phenomenon in MIS(p) Tunnel Diodes | M.H.Yang; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
| 2016 | Saturation Current Coupling Phenomenon in MIS(p) Tunnel Diodes | M.H.Yang; J.G.Hwu; JENN-GWO HWU | International Electronic Devices and Materials Symposium - IEDMS 2016 | | | |
| 2014 | Sensitivity Enhancement of Metal-Oxide-Semiconductor Tunneling Photodiode with Trapped Electrons in Ultra-Thin SiO2 Layer | Chen, Tzu-Yu; Hwu, Jenn-Gwo; JENN-GWO HWU | Ecs Journal of Solid State Science and Technology | 8 | 9 | |
| 2013 | Sensitivity enhancement of metal-oxide-semiconductor tunneling photodiode with trapped electrons in ultra-thin SiO2 layer | Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU | ECS Transactions | 3 | 0 | |
| 2008 | Shallow level trap formation in SiO2 induced by high field and thermal stresses | Lin, H.-P.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 2 | 1 | |
| 2017 | Si MIS Tunnel Diodes for Sensing Applications | J.G.Hwu; JENN-GWO HWU | 6th International Symposium on Next Generation Electronics (ISNE | | | |
| 2017 | Si MIS Tunnel Diodes for Sensing Applications | J.G.Hwu; JENN-GWO HWU | 6th International Symposium on Next Generation Electronics (ISNE | | | |
| 2008 | Silicon oxide gate dielectric on n-type 4H-SiC prepared by low thermal budget anodization method | Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Journal of the Electrochemical Society | 1 | 0 | |
| 2012 | SiO 2 thickness dependence of C-V dispersion in stacked Al/HfO 2/SiO 2/4H-SiC capacitor | JENN-GWO HWU | ECS Transactions | 0 | 0 | |
| 1994 | Stable Si MOS Devices with Oxynitride Gate Dielectrics | Hwu, Jenn-Gwo | | | | |
| 2010 | Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure | Chen, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 2 | 2 | |
| 2003 | Stress distribution on (100) Si wafer mapped by novel I-V analysis of MOS tunneling diodes | JENN-GWO HWU | IEEE Electron Device Letters | 2 | 2 | |
| 2001 | Stress effect on the kinetics of silicon thermal oxidation | Yen, J. Y.; JENN-GWO HWU ; JIA-YUSH YEN | Journal of Applied Physics | 34 | 31 | |
| 2001 | Stress effect on the kinetics of silicon thermal oxidation | Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 34 | 31 | |
| 1991 | Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits | Hwu, Jenn-Gwo | | | | |
| 1987 | Studies of the Radiation-Hardening CMOS Processes | Hwu, Jenn-Gwo ; Lee, Si-Chen ; Wang, Way-Seen | | | | |
| 1990 | A Study of the Leakage Property of Thin Gate Oxides | Hwu, Jenn-Gwo | | | | |
| 1989 | A Study of the Radiation Effect on Tantalum Oxide Films | Hwu, Jenn-Gwo | | | | |
| 2004 | Suboxide characteristics in ultrathin oxides grown under novel oxidation processes | JENN-GWO HWU | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 4 | 5 | |
| 2015 | Subthreshold swing reduction by double exponential control mechanism in an MOS gated-MIS tunnel transistor | JENN-GWO HWU | IEEE Transactions on Electron Devices | 25 | 24 | |
