| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2005 | Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure | JENN-GWO HWU | Journal of Applied Physics | 7 | 7 | |
| 1999 | The effect of patterned susceptor on the thickness uniformity of rapid thermal oxides | Lee, K.-C.; Chang, H.-Y.; Chang, H.; Hwu, J.-G.; Wung, T.-S.; JENN-GWO HWU | IEEE Transactions on Semiconductor Manufacturing | 12 | 10 | |
| 2005 | The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection | JENN-GWO HWU | Solid-State Electronics | 1 | 0 | |
| 1986 | The effect of postoxidation cooling in oxygen on the interface property of MOS capacitors | Hwu, J.-G.; Chang, J.-J.; Wang, W.-S.; JENN-GWO HWU | International Journal of Electronics | 1 | 1 | |
| 1988 | The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient | Hwu, J.-G.; Fu, S.-L.; JENN-GWO HWU | Applied Physics A Solids and Surfaces | 8 | 8 | |
| 2003 | Thermal stress at wafer contact points in rapid thermal processing investigated by repeated spike treatment before oxidation | JENN-GWO HWU | Journal of Applied Physics | 2 | 2 | |
| 2003 | Thickness-dependent stress effect in p-type metal-oxide-semiconductor structure investigated by substrate injection current | JENN-GWO HWU | Applied Physics Letters | 7 | 7 | |
| 2009 | Thin silicon oxide films on N-type 4H-SiC prepared by scanning frequency anodization method | Chuang, K.-C.; Hwu, J.-G.; JENN-GWO HWU | Microelectronic Engineering | 4 | 2 | |
| 1996 | Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification | Jeog, M.-J.; Hwu, J.-G.; JENN-GWO HWU | IEEE Electron Device Letters | 25 | 23 | |
| 1990 | Thin-oxide thickness measurement in ellipsometry by a wafer rotation method | JENN-GWO HWU | Solid State Electronics | 1 | 1 | |
| 2016 | Transconductance sensitivity enhancement in gated-MIS(p) tunnel diode by self-protective effective local thinning mechanism | JENN-GWO HWU | Applied Physics Letters | 4 | 4 | |
| 2016 | Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism | W.C.Kao; J.Y.Chen; J.G.Hwu; JENN-GWO HWU | Applied Physics Letters | 4 | 4 | |
| 2016 | Transconductance Sensitivity Enhancement in Gated-MIS(p) Tunnel Diode by Self-Protective Effective Local Thinning Mechanism | W.C.Kao; J.Y.Chen; J.G.Hwu; JENN-GWO HWU | Applied Physics Letters | 4 | 4 | |
| 2021 | Transient Current Enhancement in MIS Tunnel Diodes with Lateral Electric Field Induced by Designed High-Low Oxide Layers | Huang S.-W; Hwu J.-G.; JENN-GWO HWU | IEEE Transactions on Electron Devices | 1 | 1 | |
| 2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
| 2017 | Transient Read Current for MIS(p) Tunnel Diode with Gate Electrode Surrounded by Ultra-Thin Metal | J.G.Hwu; K.H.Tseng; Y.D.Tan; C.S.Liao; JENN-GWO HWU | Nano Science & Technology - Nano S&T 2017 | | | |
| 2020 | Transient Two-State Characteristics in MIS(p) Tunnel Diode with Edge-Thickened Oxide (ETO) Structure | Yang, Y.-C.; Lin, K.-W.; Hwu, J.-G.; JENN-GWO HWU | ECS Journal of Solid State Science and Technology | 4 | 4 | |
| 2009 | Trapping characteristics of Al2O3/HfO 2/SiO1-2 stack structure prepared by low temperature in situ oxidation in dc sputtering | Chang, C.-H.; Hwu, J.-G.; JENN-GWO HWU | Journal of Applied Physics | 19 | 18 | |
| 2010 | Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique | Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU | 15th OptoElectronics and Communications Conference, OECC2010 | | | |
| 2018 | Tunable Negative Differential Resistance in MISIM Structure with Ultra-thin Oxide and Designed Biasing | J.G.Hwu; C.F.Yang; C.S.Liao; JENN-GWO HWU | WCSM 2018, 4th Annual World Congress of Smart Materials, | | | |
