公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2005 | Cap layer induced stress in InAs (Al) GaAs quantum dots | Chen, S.-D.; Chen, Y.-Y.; SI-CHEN LEE | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |
2009 | Characteristics of a waveguide mode in a trilayer Ag/SiO <inf>2</inf> /Au plasmonic thermal emitter | Jiang, Y.-W.; Wu, Y.-T.; Tsai, M.-W.; Chang, P.-E.; Tzuang, D.-C.; Ye, Y.-H.; Lee, S.-C.; SI-CHEN LEE | Optics Letters | 10 | 9 | |
1987 | The Characteristics of a-SiC:H | Lin, W. L.; Tsai, H. K.; Sah, Wen-Jyh; 李嗣涔 ; Lee, Si-Chen | The 13th EDMS | | | |
1988 | The Characteristics of Amorphous Silicon Carbide Hydrogen Alloy | Tsai, H. K.; Lin, W. L.; Sah, Wen-Jyh; 李嗣涔 ; Lee, Si-Chen | Journal of Applied Physics | | | |
2020 | Characteristics of Harmonic Indexes of the Arterial Blood Pressure Waveform in Type 2 Diabetes Mellitus | Liao, C.-K.; JAW-SHIUN TSAI ; Lin, L.-Y.; Lee, S.-C.; CHUN-FU LAI ; Ho, T.-W.; FEI-PEI LAI ; SI-CHEN LEE | Frontiers in Bioengineering and Biotechnology | 5 | 4 | |
1988 | The Characteristics of Si-Doped GaAs Epilayers Grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source | 劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; Lin, Hao-Hsiung | Applied Physics Letters | | | |
1987 | Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source | Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; CHEE-WEE LIU ; SI-CHEN LEE ; HAO-HSIUNG LIN | Applied Physics Letters | 9 | 9 | |
1987 | The Characteristics of Silane Doping of GaAs by MOCVD | 劉志文 ; Chen, S. L.; Lay, J. P.; 李嗣涔 ; 林浩雄 ; Lin, Hao-Hsiung | 13th EDMS | | | |
1987 | Charge Temperature Effects on Co-60 Irradiated Mos Capacitors | Lee, G. S.; 胡振國 ; 李嗣涔 ; 王維新; Wang, Way-Seen | The 13th EDMS | | | |
1992 | The Common Gate CMOS Inverter with Amorphous Silicon Thin Film Transistor on Top of Crystalline PMOS | Lin, H. C.; Sah, Wen-Jyh; 李嗣涔 ; Lee, Si-Chen | Solid State Electronics | | | |
1987 | The Common Gate CMOS with Amorphous Thin Film Transistor on Top of Crystalline PMOS | Lin, H. C.; Sah, Wen-Jyh; 李嗣涔 ; Lee, Si-Chen | The 17th EDMS | | | |
1992 | A common-gate CMOS inverter with n-channel amorphous silicon thin-film transistor formed on a crystalline PMOSFET | Lin, H.-C.; Sah, W.-J.; Lee, S.-C.; SI-CHEN LEE | Solid State Electronics | 0 | 0 | |
2007 | Coupling between surface plasmons via thermal emission of a dielectric layer sandwiched between two metal periodic layers | Tsai, M.-W.; Chen, C.-Y.; Jiang, Y.-W.; Ye, Y.-H.; Chang, H.-Y.; Chuang, T.-H.; SI-CHEN LEE | Applied Physics Letters | 4 | 3 | |
2008 | Coupling of surface plasmons between two silver films in a Ag/ SiO2 /Ag plasmonic thermal emitter with grating structure | Ye, Y.-H.; Jiang, Y.-W.; Tsai, M.-W.; Chang, Y.-T.; Chen, C.-Y.; Tzuang, D.-C.; Wu, Y.-T.; SI-CHEN LEE | Applied Physics Letters | 32 | 22 | |
2007 | Coupling of surface plasmons between two silver films in a plasmonic thermal emitter | Chen, C.-Y.; Tsai, M.-W.; Jiang, Y.-W.; Ye, Y.-H.; Chang, Y.-T.; SI-CHEN LEE | Applied Physics Letters | 26 | 16 | |
1991 | The Crystalline PMOS Inverter Using Amorphous Thin Film Transistor as Active Load | Lin, H. C.; Sah, Wen-Jyh; 李嗣涔 ; Lee, Si-Chen | Electronics Letters | | | |
1991 | Crystalline pMOS inverter using amorphous thin film transistor as active load | Lin, H.-C.; Sah, W.-J.; Lee, S.-C.; SI-CHEN LEE | Electronics Letters | 0 | 0 | |
2018 | Current Enhancement and Bipolar Current Modulation of Top-Gate Transistors Based on Monolayer MoS<inf>2</inf> on Three-Layer W<inf>x</inf>Mo<inf>1- x</inf>S<inf>2</inf> | Chen, K.-C.; Jian, C.-Y.; Chen, Y.-J.; Lee, S.-C.; Chang, S.-W.; Lin, S.-Y.; SI-CHEN LEE | ACS Applied Materials and Interfaces | 1 | 1 | |
1990 | The current leakage mechanism in InSb p + n diodes | Sun, T.-P.; Lee, S.-C.; Yang, S.-J.; SI-CHEN LEE | Journal of Applied Physics | 4 | 4 | |
1990 | The Current Leakage Mechanism in InSb p+n Diodes | Sun, Tai-Ping; 李嗣涔 ; 楊聲震; Lee, Si-Chen ; Yang, Seng-Jenn | Journal of Appllied Physics | | | |