公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
1998 | Valence band properties of relaxed Ge1-xCx alloys | CHEE-WEE LIU ; Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
1998 | Valence band properties of relaxed Ge<inf>1-x</inf>C<inf>x</inf> alloys | CHEE-WEE LIU ; Lin, C.Y.; Liu, C.W.; Lee, L.J.; CHEE-WEE LIU | Materials Chemistry and Physics | | | |
2021 | Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system | CHEE-WEE LIU ; Dolgopolov V.T; Melnikov M.Y; Shashkin A.A; Huang S.-H; Liu C.W; Kravchenko S.V.; CHEE-WEE LIU | Physical Review B | | | |
2018 | Vertically stacked strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD epitaxial growth and the optimum selective channel release process | CHEE-WEE LIU ; Huang Y.-S; Lu F.-L; Tsou Y.-J; Ye H.-Y; Lin S.-Y; Huang W.-H; CHEE-WEE LIU | IEEE Electron Device Letters | | | |
2001 | Visible and band edge electroluminescence from indium tin oxide/SiO2/Si metal–oxide–semiconductor structures | MIIN-JANG CHEN ; CHING-FUH LIN ; Liu, W. T.; Chang, S. T.; CHEE-WEE LIU | Journal of Applied Physics | 13 | 13 | |
2005 | Visible photoluminescence from Ge quantum dots | CHEE-WEE LIU ; Sun, K.W.; Sue, S.H.; CHEE-WEE LIU | Physica E: Low-Dimensional Systems and Nanostructures | | | |
2011 | Voltage linearity improvement of HfO<inf>2</inf>-based metal-insulator- metal capacitors with H<inf>2</inf> O prepulse treatment | CHEE-WEE LIU ; Lin, C.-M.; Chen, Y.-T.; Lee, C.-H.; Chang, H.-C.; Chang, W.-C.; Chang, H.-L.; CHEE-WEE LIU | Journal of the Electrochemical Society | | | |
2019 | Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method | CHEE-WEE LIU ; Tsou Y.-J; Chiu J.-C; Shih H.-C; CHEE-WEE LIU | IEEE Journal on Exploratory Solid-State Computational Devices and Circuits | | | |
1998 | 以矽晶圓為基礎的長波長紅外線偵測器(新型SiGeC 材料之研究) | 劉致為 | | | | |
2007 | 先進CMOS元件及製程研究-子計畫四:遷移率增強技術(2/3) | 劉致為 | | | | |
2008 | 先進CMOS元件及製程研究-子計畫四:遷移率增強技術(3/3) | 劉致為 | | | | |
1999 | 具網路結合功能之半導體製造集結式機台─子計畫二:用於12吋晶圓製造之前段製程技術(1/3) | 劉致為 | | | | |
2000 | 具網路結合功能之半導體製造集結式機台─子計畫二:用於12吋晶圓製造之前段製程技術(2/3) | 劉致為 | | | | |
2001 | 具網路結合功能之半導體製造集結式機台─子計畫二:用於12吋晶圓製造之前段製程技術(3/3) | 劉致為 | | | | |
2005 | 前瞻矽鍺/高介電質/金屬閘極元件及模組技術 – 子計
畫四:矽鍺/高介電質/金屬閘極光電元件與模組技術(I) | 劉致為 | | | | |
2005 | 前瞻矽鍺/高介電質/金屬閘極元件及模組技術 –總
計劃(I) | 劉致為 | | | | |
1999 | 半導體關鍵設備研發(III)─子計畫二:0.35UM或更高技術之單晶圓化學氣相沉積反應器 | 劉致為 | | | | |
1998 | 半導體關鍵設備研發-子計畫二﹕
0.35:m 或更高技術之單晶圓化學氣相沉積反應器( I ) | 劉致為 | | | | |
1997 | 半導體關鍵設備研發─子計畫二:0.35um或更高技術之單晶圓化學氣相沉積反應器(I) | 劉致為 | | | | |
2003 | 可供四吋到八吋及破片作晶圓鍵結之快熱製程機台 | 劉致為 | | | | |