Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
2002 | Conjugated and free polyamine levels in normal and aborting maize kernels | Liang, Y.-L.; Lur, H.-S. | Crop Science | 40 | 32 | |
2022 | Cryogenic Si/SiGe Heterostructure Flash Memory Devices | Hou, Wei Chih; Hsu, Nai Wen; Wang, Tz Ming; Liu, Chia You; Kao, Hsiang Shun; MIIN-JANG CHEN ; JIUN-YUN LI | ACS Applied Electronic Materials | 0 | 0 | |
2021 | Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure | Chen D et al.; Cai S; Hsu N.-W; Huang S.-H; Chuang Y; Nielsen E; JIUN-YUN LI ; CHEE-WEE LIU ; Lu T.M; Laroche D. | Applied Physics Letters | 0 | 1 | |
2017 | Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system | T. M. Lu; L. A. Tracy; D. Laroche; S. –H. Huang; Y. Chuang; Y. –H Su; JIUN-YUN LI ; CHEE-WEE LIU | Scientific Reports | 9 | 7 | |
2016 | Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology | Lee, Y.-J.; JIUN-YUN LI et al. | International Electron Devices Meeting, IEDM | 16 | 0 | |
1998 | Effect of nitrogen rates on storage proteins in tainan-white maize population | Yeh, C.-S.; Lur, H.-S. ; Tseng, M.-T.; Huang, Y.-C. | Journal of the Agricultural Association of China | 0 | | |
2017 | Effective g factor of low-density two-dimensional holes in a Ge quantum well | T. M. Lu; C. T. Harris; S. –H. Huang; Y. Chuang; JIUN-YUN LI ; CHEE-WEE LIU | Applied Physics Letters | 12 | 11 | |
2022 | Effective out-of-plane g factor in strained-Ge/SiGe quantum dots | Miller, Andrew J.; Hardy, Will J.; Luhman, Dwight R.; Brickson, Mitchell; Baczewski, Andrew; Liu, Chia You; JIUN-YUN LI ; Lilly, Michael P.; Lu, Tzu Ming | Physical Review B | 1 | 1 | |
1996 | Effects of ABA on chilling tolerance of sorghum (Sorghum bicolor L.) seedlings | Kao, H.-L.; Lur, H.-S. ; Chu, C. | Journal of the Agricultural Association of China | 0 | | |
2017 | Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures | Yi-Hsin Su; Yen Chuang; Chia-You Liu; JIUN-YUN LI ; Lu, Tzu-Ming | Physical Review Materials | 22 | 17 | |
2019 | Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening | Su, Y.-H.; Chou, K.-Y.; Chuang, Y.; Lu, T.-M.; JIUN-YUN LI | Journal of Applied Physics | 9 | 10 | |
2021 | Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain | Chuang Y; Liu C.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | IEEE Electron Device Letters | 11 | 11 | |
2021 | Electron-spin-resonance meanderlines for effective spin control in Si quantum dots for large-scale qubit applications | Chang Y.-C; Huang I; Chen C.-Y; Lin M.-J; SHIH-YUAN CHEN ; JIUN-YUN LI | Applied Physics Letters | 0 | 0 | |
2015 | Enhancement of spin susceptibility of low-density two-dimensional electrons in a high quality Si/SiGe quantum well | JIUN-YUN LI; JIUN-YUN LI | | | | |
1996 | Ethylene may be involved in abortion of the maize caryopsis | Cheng, C.-Y.; Lur, H.-S. | Physiologia Plantarum | 70 | 63 | |
2005 | Expression of a bi-functional and thermostable amylopullulanase in transgenic rice seeds leads to autohydrolysis and altered composition of starch | Chiang, C.-M.; Yeh, F.-S.; Huang, L.-F.; Tseng, T.-H.; Chung, M.-C.; Wang, C.-S.; Lur, H.-S. ; Shaw, J.-F.; Yu, S.-M. | Molecular Breeding | 34 | 26 | |
2013 | Extremely high electron mobility in isotopically-enriched 28Si two-dimensional electron gases grown by chemical vapor deposition | Li, J.-Y.; Huang, C.-T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | Applied Physics Letters | 18 | 18 | |
2012 | Extremely low electron density in a modulation-doped Si/SiGe two-dimensional electron gases by effective schottky gating | Li, J.Y.; Huang, C.T.; Rokhinson, L.P.; Sturm, J.C.; JIUN-YUN LI | ECS Transactions | 3 | 0 | |
2012 | Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD | Li, J.-Y.; Huang, C.-T.; Sturm, J.C.; JIUN-YUN LI | 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 | 0 | 0 | |
2023 | Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques | Hong, TC; Lu, WH; Wang, YH; JIUN-YUN LI ; Lee, YJ; Chao, TS | IEEE TRANSACTIONS ON ELECTRON DEVICES | 0 | 0 | |