公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2014 | Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices | Zhao, Yuji; Farrell, Robert M.; YUH-RENN WU ; Speck, James S. | Japanese Journal of Applied Physics | 38 | 31 | |
2005 | Velocity overshoot effects and scaling issues in III-V nitrides | Singh, M; Wu, YR; Singh, JP; YUH-RENN WU | IEEE Transactions on Electron Devices | 25 | 22 | |
2022 | Vertical hole transport through unipolar InGaN quantum wells and double heterostructures | Qwah K.S; Monavarian M; Ho W.Y; YUH-RENN WU ; Speck J.S. | Physical Review Materials | 2 | 0 | |
2012 | Vertical Transport through AlGaN Barriers in Heterostructures Grown by Ammonia Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition | David Browne; Micha Fireman; Baishakhi Mazumder; Leah Kuritzky; Yuh-Renn Wu; James Speck; YUH-RENN WU ; �d�|�� | Semiconductor Science and Technology | 9 | 9 | |
2021 | Wearable Devices Made of a Wireless Vertical-Type Light-Emitting Diode Package on a Flexible Polyimide Substrate with a Conductive Layer | Wu W.-Y; Hsu Y.-H; Chen Y.-F; Wu Y.-R; Liu H.-W; Tu T.-Y; Chao P.P.-C; Tan C.-S; Horng R.-H.; YUH-RENN WU | ACS Applied Electronic Materials | 6 | 6 | |
2008 | 氮化銦鎵量子(井/點)白光二極體之理論分析 | 吳育任 |