公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2019 | Device Designs and Analog Performance Analysis for Negative-Capacitance Vertical-Tunnel FET | Lin H.-H; Hu V.P.-H.; VITA PI-HO HU | Proceedings - International Symposium on Quality Electronic Design, ISQED | 4 | 0 | |
2018 | Device Designs of III-V Tunnel FETs for Performance Enhancements through Line Tunneling | Wang C.-T; Hu V.P.-H.; VITA PI-HO HU | 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings | 4 | 0 | |
2022 | Efficient Erase Operation by GIDL Current for 3D Structure FeFETs with Gate Stack Engineering and Compact Long-Term Retention Model | Mo F; Xiang J; Mei X; Sawabe Y; Saraya T; Hiramoto T; Su C.-J; VITA PI-HO HU ; Kobayashi M. | IEEE Journal of the Electron Devices Society | 3 | 3 | |
2022 | Energy-and Area-Efficient 8T SRAM Cell with FEOL CFETs and BEOL-Compatible Transistors | Lee, Ming; Huang, Zi Yuan; Fan, Shao Fu; Lu, Yu Cheng; VITA PI-HO HU | Technical Digest - International Electron Devices Meeting, IEDM | 0 | 0 | |
2020 | Energy-Efficient Monolithic 3-D SRAM Cell with BEOL MoS<inf>2</inf>FETs for SoC Scaling | Su, C.-W.; Lee, Y.-W.; Ho, T.-Y.; Cheng, C.-C.; Chen, T.-C.; Hung, T.Y.-T.; Li, J.-F.; Chen, Y.-G.; Li, L.-J.; VITA PI-HO HU | IEEE Transactions on Electron Devices | 9 | 10 | |
2019 | Evaluation of analog circuit performance for ferroelectric SOI MOSFETs considering interface trap charges and gate length variations | Lu Y.-C; Hu V.P.-H.; VITA PI-HO HU | 2019 Silicon Nanoelectronics Workshop, SNW 2019 | 7 | 0 | |
2016 | Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications | C.-H. Yu; M.-L. Fan; K.-C. Yu; Pin Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Electron Devices | 16 | 17 | |
2014 | Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells | VITA PI-HO HU ; Fan M.-L; Su P; Chuang C.-T. | Proceedings - IEEE International Symposium on Circuits and Systems | 0 | 0 | |
2014 | Evaluation of Stabilit, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist Circuits | Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 | IEEE Journal on Emerging and Selected Topics in Circuits and Systems | 46 | 38 | |
2014 | Evaluation of Sub-0.2 V High-Speed Low-Power Circuits Using Hetero-Channel MOSFET and Tunneling FET Devices | Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; VITA PI-HO HU ; Y.-N. Chen; M.-L. Fan; V. P.-H. Hu; Pin Su; C.-T. Chuang; 胡璧合 | IEEE Transactions on Circuits and Systems I: Regular Papers | 13 | 9 | |
2011 | FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics | M.-L. Fan; C.-Y. Hsieh; P. Su; C.-T. Chuang; VITA PI-HO HU | IEEE Transactions on Electron Devices | 33 | 22 | |
2021 | High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing | VITA PI-HO HU ; Liu C.-J; Chiang H.-L; Wang J.-F; Cheng C.-C; Chen T.-C; Chang M.-F. | Technical Digest - International Electron Devices Meeting, IEDM | 6 | 0 | |
2021 | Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory | Liao C.-Y; VITA PI-HO HU et al. | ECS Journal of Solid State Science and Technology | 2 | 2 | |
2012 | Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs | C.-H. Yu; Y.-S. Wu; P. Su; VITA PI-HO HU | IEEE Transactions on Electron Devices | 6 | 6 | |
2011 | Impact of quantum confinement on short-channel effects for ultrathin-body germanium-on-insulator MOSFETs | Wu Y.-S; Hsieh H.-Y; VITA PI-HO HU ; Su P. | IEEE Electron Device Letters | 20 | 14 | |
2012 | Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs | C.-H. Yu; Y.-S. Wu; P. Su; VITA PI-HO HU | IEEE Transactions on Nanotechnology | 11 | 9 | |
2019 | Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs | P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU | IEEE Journal of the Electron Devices Society | 19 | 20 | |
2015 | Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells | VITA PI-HO HU ; Fan M.-L; Su P; Chuang C.-T. | Proceedings - IEEE International Symposium on Circuits and Systems | 2 | 0 | |
2015 | Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits | Y.-N. Chen; C.-J. Chen; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU | Journal of Low Power Electronics and Applications | 9 | 0 | |
2023 | Improved Radiation Hardness for Nanosheet FETs with Partial Bottom Dielectric Isolation | Zheng, Xun Ting; VITA PI-HO HU | 2023 Silicon Nanoelectronics Workshop, SNW 2023 | 0 | 0 | |