| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2021 | High-Density and High-Speed 4T FinFET SRAM for Cryogenic Computing | VITA PI-HO HU ; Liu C.-J; Chiang H.-L; Wang J.-F; Cheng C.-C; Chen T.-C; Chang M.-F. | Technical Digest - International Electron Devices Meeting, IEDM | 5 | 0 | |
| 2021 | Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory | Liao C.-Y; VITA PI-HO HU et al. | ECS Journal of Solid State Science and Technology | 2 | 2 | |
| 2012 | Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs | C.-H. Yu; Y.-S. Wu; P. Su; VITA PI-HO HU | IEEE Transactions on Electron Devices | 6 | 6 | |
| 2011 | Impact of quantum confinement on short-channel effects for ultrathin-body germanium-on-insulator MOSFETs | Wu Y.-S; Hsieh H.-Y; VITA PI-HO HU ; Su P. | IEEE Electron Device Letters | 20 | 14 | |
| 2012 | Impact of Quantum Confinement on Subthreshold Swing and Electrostatic Integrity of Ultra-Thin-Body GeOI and InGaAs-OI n-MOSFETs | C.-H. Yu; Y.-S. Wu; P. Su; VITA PI-HO HU | IEEE Transactions on Nanotechnology | 11 | 9 | |
| 2019 | Impact of Work Function Variation, Line-Edge Roughness, and Ferroelectric Properties Variation on Negative Capacitance FETs | P.-C. Chiu; Y.-C. Lu; VITA PI-HO HU | IEEE Journal of the Electron Devices Society | 19 | 19 | |
| 2015 | Impacts of NBTI and PBTI on ultra-thin-body GeOI 6T SRAM cells | VITA PI-HO HU ; Fan M.-L; Su P; Chuang C.-T. | Proceedings - IEEE International Symposium on Circuits and Systems | 2 | 0 | |
| 2015 | Impacts of Work Function Variation and Line-Edge Roughness on TFET and FinFET Devices and 32-Bit CLA Circuits | Y.-N. Chen; C.-J. Chen; M.-L. Fan; Pin Su; C.-T. Chuang; VITA PI-HO HU | Journal of Low Power Electronics and Applications | 9 | 0 | |
| 2023 | Improved Radiation Hardness for Nanosheet FETs with Partial Bottom Dielectric Isolation | Zheng, Xun Ting; VITA PI-HO HU | 2023 Silicon Nanoelectronics Workshop, SNW 2023 | | | |
| 2019 | Improved read stability and writability of negative capacitance FinFET SRAM cell for subthreshold operation | Zheng Z.-A; Hu V.P.-H.; VITA PI-HO HU | Proceedings - IEEE International Symposium on Circuits and Systems | 7 | 0 | |
| 2023 | Improved Scalability of Negative Capacitance Junctionless Transistors With Underlap Design | Gupta, Manish; VITA PI-HO HU | IEEE Transactions on Electron Devices | 0 | 0 | |
| 2021 | Improved switching time in negative capacitance junctionless transistors | Gupta M; VITA PI-HO HU | VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings | 0 | 0 | |
| 2012 | Independently-Controlled-Gate FinFET Schmitt Trigger Sub-Threshold SRAMs | C.-Y. Hsieh; M.-L. Fan; VITA PI-HO HU | IEEE Transactions on Very Large Scale Integration (VLSI) Systems | 39 | 29 | |
| 2021 | Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors | Gupta M; Hu V.P.-H.; VITA PI-HO HU | ECS Journal of Solid State Science and Technology | 2 | 2 | |
| 2015 | Investigation and Simulation of Work-Function Variation for III-V Broken-Gap Heterojunction Tunnel FET | C.-W. Hsu; M.-L. Fan; V. P.-H. Hu; Pin Su; VITA PI-HO HU ; C.-W. Hsu; M.-L. Fan; V. P.-H. Hu; Pin Su; 胡璧合 ; VITA PI-HO HU | IEEE Journal of the Electron Devices Society | 20 | 0 | |
| 2015 | Investigation of Backgate-Biasing Effect for Ultrathin-Body III-V Heterojunction Tunnel FET | M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; C.-W. Hsu; Pin Su; C.-T. Chuang; VITA PI-HO HU ; M.-L. Fan; V. P.-H. Hu; Y.-N. Chen; C.-W. Hsu; Pin Su; C.-T. Chuang; 胡璧合 ; VITA PI-HO HU | IEEE Transactions on Electron Devices | 24 | 20 | |
| 2016 | Investigation of BTI reliability for monolithic 3D 6T SRAM with ultra-thin-body GeOI MOSFETs | VITA PI-HO HU ; Su P; Chuang C.-T. | Proceedings - IEEE International Symposium on Circuits and Systems | 2 | 0 | |
| 2010 | Investigation of cell stability and write ability of finfet subthreshold SRAM using analytical SNM model | Fan M.-L; Wu Y.-S; VITA PI-HO HU ; Su P; Chuang C.-T. | IEEE Transactions on Electron Devices | 33 | 20 | |
| 2011 | Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET | Y.-S. Wu; P. Su; VITA PI-HO HU | IEEE Transactions on Nanotechnology | 11 | 9 | |
| 2009 | Investigation of static noise margin of ultra-thin-body SOI SRAM cells in subthreshold region using analytical solution of poisson's equation | VITA PI-HO HU ; Wu Y.-S; Fan M.-L; Su P; Chuang C.-T. | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 0 | 0 | |
