公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2008 | 1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors | Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; MINGHWEI HONG ; Kwo, J.; Tsai, W. | Applied Physics Letters | 51 | 43 | |
2008 | Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO<inf>2</inf> on In<inf>0.53</inf>Ga<inf>0.47</inf>As | Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; MINGHWEI HONG ; Kwo, J. | Applied Physics Letters | 47 | 40 | |
2011 | Achieving very high drain current of 1.23 mA/弮m in a 1-弮m-gate-length self-aligned inversion-channel MBE-Al<inf>2</inf>O<inf>3</inf>/Ga <inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O<inf>3</inf>)/In<inf>0.75</inf>Ga <inf>0.25</inf>As MOSFET | Lin, T.D.; Chang, P.; Wu, Y.D.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 2 | |
2009 | Advances on III-V MOSFET for science and technology beyond Si CMOS | Kwo, J.; Lin, T.D.; Huang, M.L.; Chang, P.; Lee, Y.J.; MINGHWEI HONG | ECS Transactions | 1 | 0 | |
2011 | Atomic-scale determination of band offsets at the Gd<inf>2</inf>O <inf>3</inf>/GaAs (100) hetero-interface using scanning tunneling spectroscopy | Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; YA-PING CHIU ; MINGHWEI HONG | Applied Physics Letters | 10 | 11 | |
1993 | Comparison of Adsorption Capacity of VOCs on Various Adsorbents | 蔣本基 ; Chiang, H. L.; You, J. H.; Lin, T. F.; Chang, P.; Chiang, Pen-Chi | The 6th International Conference on Indoor Air Quality and Climate | | | |
1986 | Correlation Study between Acoustic-Magnetic Testing and Finite Element Modeling for a Printer Hammer | Chang, P.; Crawforth, L.; Imaino, W.; Juliana, A.; 李學養; Lehman, L.; Munce, A.; Wang, S.; Lee, Share-Young | | | | |
2007 | Cubic HfO<inf>2</inf> doped with y<inf>2</inf>O<inf>2</inf> epitaxial films on GaAs (001) of enhanced dielectric constant | Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 50 | 50 | |
2010 | Dc and rf characteristics of self-aligned inversion-channel In <inf>0.53</inf> Ga<inf>0.47</inf> As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al<inf>2</inf> O<inf>3</inf> / Ga <inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) as gate dielectrics | Lin, T.D.; Chang, P.; Chiu, H.C.; Hong, M.; Kwo, J.; Lin, Y.S.; Hsu, S.S.H.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 5 | 3 | |
2007 | Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectric | Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
2009 | Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics | Lin, C.A.; Lin, T.D.; Chiang, T.H.; Chiu, H.C.; Chang, P.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 11 | |
1998 | Design of Microelectrode Arrays for Electrostatic Microactuators and Capacitive Microsensors | Chang, P.; Chang, C.; Yen, K.; PEI-ZEN CHANG | Journal of Intelligent Material Systems and Structures | | | |
2013 | Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe <inf>3</inf>Si films with normal metals Au and Pt | Hung, H.Y.; Luo, G.Y.; Chiu, Y.C.; Chang, P.; Lee, W.C.; Lin, J.G.; Lee, S.F.; Hong, M.; MINGHWEI HONG ; Lin, J. G. | Journal of Applied Physics | 23 | 21 | |
2008 | Difference in Direct CP Violation between Charged and Neutral B Meson Decays | Lin, S.-W.; Unno, Y.; Hou, W.-S.; Chang, P. | Nature | | | |
2011 | Direct measurement of interfacial structure in epitaxial Gd <inf>2</inf>O<inf>3</inf> on GaAs (0 0 1) using scanning tunneling microscopy | Chiu, Y.P.; Shih, M.C.; Huang, B.C.; Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; YA-PING CHIU ; MINGHWEI HONG | Microelectronic Engineering | 2 | 2 | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 28 | 29 | |
2001 | An epidemiological study of nocturnal enuresis in Taiwanese children | Chang, P.; Chen, W.J.; Tsai, W.-Y.; Chiu, Y.-N. | BJU International | | | |
2011 | Epitaxial stabilization of a monoclinic phase in Y<inf>2</inf>O<inf>3</inf> films on c-plane GaN | Chang, W.H.; Chang, P.; Lee, W.C.; Lai, T.Y.; Kwo, J.; Hsu, C.-H.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 20 | 20 | |
1993 | Evaluation of Adsorbents for Volatile Organic Chemicals | Chiang, P.C.; You, J.H.; Lin, T.F.; Chang, P. | Studies in Surface Science and Catalysis 80: | | | |