公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Nano-electronics of high 庥 dielectrics on ingaas for key technologies beyond Si CMOS | Lin, T.D.; Chang, P.; Chiu, H.C.; Chang, Y.C.; Lin, C.A.; Chang, W.H.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Kwo, J.; Hong, M.; MINGHWEI HONG | Conference Proceedings - International Conference on Indium Phosphide and Related Materials | 2 | 0 | |
2009 | Nanometer-thick single-crystal hexagonal Gd<inf>2</inf>O<inf>3</inf> on GaN for advanced complementary metal-oxide-semiconductor technology | Chang, W.H.; Lee, C.H.; Chang, Y.C.; Chang, P.; Huang, M.L.; Lee, Y.J.; Hsu, C.-H.; Hong, J.M.; Tsai, C.C.; Kwo, J.R.; Hong, M.; MINGHWEI HONG | Advanced Materials | 60 | 57 | |
1993 | Picosecond photoconductive switches designed for on-wafer characterization of high frequency interconnects | Golob, L.P.; Huang, S.L.; Lee, Chi H.; Chang, W.H.; Jones, K.; Taysing-Lara, M.; DeAnni, T.; SHENG-LUNG HUANG | IEEE MTT-S International Microwave Symposium | | | |
2007 | Point-of-care support for error-free medication process | Liu, J.W.S.; Shih, C.S.; Yeh, H.C.; Hsiu, P.C.; Chang, W.H.; Tsai, P.H.; Yu, C.Y.; CHI-SHENG SHIH | 2007 Joint Workshop on High Confidence Medical Devices, Software, and Systems and Medical Device Plug-and-Play Interoperability, HCMDSS/MDPnP 2007 | 9 | 0 | |
2007 | Point-of-Care Support for Error-Free Medication Process | Liu, J.W.S.; Shih, C.S.; Yeh, H.C.; Hsiu, P.C.; Chang, W.H.; Tsai, J.P.H.; Yu, C.Y. | High Confidence Medical Devices, Software, and Systems and Medical Device Plug-and-Play Interoperability, 2007. HCMDSS-MDPnP. Joint Workshop on | | | |
2011 | Self-aligned inversion-channel In<inf>0.2</inf>Ga<inf>0.8</inf>As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al<inf>2</inf> O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>) as the gate dielectric | Chang, W.H.; Chiang, T.H.; Wu, Y.D.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 4 | 4 | |
2009 | Self-aligned inversion-channel In<inf>0.75</inf>Ga<inf>0.25</inf>As MOSFETs using MBE-Al<inf>2</inf>O<inf>3</inf>/Ga<inf>2</inf>O<inf>3</inf>(Gd <inf>2</inf>O<inf>3</inf>) and ALD-Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Lin, T.D.; Chiu, H.C.; Chang, P.; Chang, Y.H.; Lin, C.A.; Chang, W.H.; Kwo, J.; Tsai, W.; Hong, M.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | 1 | 0 | |
2010 | Structural characteristics of nanometer thick Gd<inf>2</inf>O<inf>3</inf> films grown on GaN (0001) | Chang, W.H.; Chang, P.; Lai, T.Y.; Lee, Y.J.; Kwo, J.; Hsu, C.-H.; Hong, M.; MINGHWEI HONG | Crystal Growth and Design | 14 | 12 | |