公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties | Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2013 | High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 | Lin, TD; Chang, WH; Chu, RL; Chang, YC; Chang, YH; Lee, MY; Hong, PF; Chen, Min-Cheng; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | InGaAs and Ge MOSFETs with a common high $κ$ gate dielectric | Lee, WC; Lin, TD; Chu, LK; Chang, P; Chang, YC; Chu, RL; Chiu, HC; Lin, CA; Chang, WH; Chiang, TH; others; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | | | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics | Chang, YC; Chang, WH; Chiu, HC; Shiu, KH; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | 2008 Device Research Conference | | | |
2013 | Inversion-channel GaAs (100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces | Chang, YC; Chang, WH; Merckling, C; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2008 | Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Tung, LT; Lee, CH; Shiu, KH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Inversion-channel GaN MOSFET using atomic-layer-deposited Al 2 O 3 as gate dielectric | Chang, YC; Chang, WH; Chiu, HC; Chang, YH; Tung, LT; Lee, CH; Hong, M; Kwo, J; Hong, JM; Tsai, CC; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, 2009 | | | |
2014 | (Invited) High $κ$/InGaAs for Ultimate CMOS-Interfacial Passivation, Low Ohmic Contacts, and Device Performance | Chang, WH; Lin, TD; Liao, Min-Han; Pi, TW; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG | ECS Transactions | | | |
2009 | Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS | Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG | 2009 IEEE International Conference on Indium Phosphide & Related Materials | | | |
2011 | Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)] | Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2011 | Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric | Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2014 | Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs | Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | | | |
2010 | Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001) | Chang, WH; Chang, P; Lai, TY; Lee, YJ; Kwo, J; Hsu, C-H; Hong, M; MINGHWEI HONG | Crystal Growth & Design | | | |