公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)] | Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Self-aligned inversion-channel In 0.75 Ga 0.25 As MOSFETs using MBE-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Lin, TD; Chiu, HC; Chang, P; Chang, YH; Lin, CA; Chang, WH; Kwo, J; Tsai, W; Hong, M; MINGHWEI HONG | Proceedings of the European Solid State Device Research Conference, 2009 | | | |
2011 | Self-aligned inversion-channel In0. 2Ga0. 8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3 (Gd2O3) as the gate dielectric | Chang, WH; Chiang, TH; Wu, YD; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2014 | Semiconductor-insulator Interfaces, High $κ$ Dielectrics on (In) GaAs | Pi, TW; Lin, TD; Chang, WH; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG | Wiley Encyclopedia of Electrical and Electronics Engineering | | | |
2010 | Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001) | Chang, WH; Chang, P; Lai, TY; Lee, YJ; Kwo, J; Hsu, C-H; Hong, M; MINGHWEI HONG | Crystal Growth & Design | | | |