公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 71 | |
2006 | Energy-band parameters of atomic-layer-deposition Al<inf>2</inf>O <inf>3</inf>/InGaAs heterostructure | Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lin, T.D.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 181 | 175 | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al <inf>2</inf> O<inf>3</inf> / Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O <inf>3</inf>) / In<inf>0.2</inf> Ga<inf>0.8</inf> As | Wu, Y.D.; Lin, T.D.; Chiang, T.H.; Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Hong, M.; Lin, C.A.; Kwo, J.; MINGHWEI HONG | Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics | 7 | 13 | |
2007 | Enhancing intensity of emitted light from a ring by incorporating a circular groove | Chang, C.K.; Lin, D.Z.; Chang, Y.C.; Lin, M.W.; Yeh, J.T.; Liu, J.M.; Yeh, C.S.; CHIH-KUNG LEE | Optics Express | 7 | 8 | |
2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
2008 | Facile synthesis of large scale Er-doped ZnO flower-like structures with enhanced 1.54μm infrared emission | Yang, W.C.; Wang, C.W.; He, J.H.; Chang, Y.C.; Wang, J.C.; Chen, L.J.; Chen, H.Y.; Gwo, S. | Phys. Stat. Sol. A | | | |
2008 | Fourier analysis of surface plasmon waves launched from single nanohole and nanohole arrays: Unraveling tip-induced effects | Chang, Y.C.; Chu, J.Y.; Wang, T.J.; Lin, M.W.; Yeh, J.T.; Wang, J.-K. | Optics Express | 7 | 9 | |
2013 | A fractal dimensional approach to successful evaluation of apical healing | Huang, C.C.; Chen, J.C.; Chang, Y.C.; JIIANG-HUEI JENG ; CHUNG-MING CHEN | International Endodontic Journal | 18 | 17 | |
2004 | Gel Electrophoresis in Polydimethylsiloxane for DNA Purification | Lin, C.M.; Wo, A.M.; Chang, Y.C.; H.P. Lin | Bulletin of the College of Engineering | | | |
2010 | Great reduction of interfacial traps in Al<inf>2</inf>O<inf>3</inf>/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, Y.C.; Merckling, C.; Penaud, J.; Lu, C.Y.; Brammertz, G.; Wang, W.-E.; Hong, M.; Kwo, J.; Dekoster, Caymax, M.; Meuris, M.; Heyns, M.; MINGHWEI HONG | Device Research Conference | 0 | 0 | |
2011 | H2S molecular beam passivation of Ge(0 0 1) | Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M.M.; Caymax, M.; MINGHWEI HONG | Microelectronic Engineering | 9 | 9 | |
2009 | High 庥 dielectric single-crystal monoclinic Gd<inf>2</inf>O<inf>3</inf> on GaN with excellent thermal, structural, and electrical properties | Chang, W.H.; Lee, C.H.; Chang, P.; Chang, Y.C.; Lee, Y.J.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hsu, C.-H.; MINGHWEI HONG | Journal of Crystal Growth | 49 | 50 | |
2013 | High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf> | Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 48 | |
2016 | Identification of a highly transfectable cell line permissive to Porcine Epidemic Diarrhea Virus infection and replication | Yang, C.; Chang, Y.C.; Chang, C.Y.; Tsai, P. S.; Jeng, C.R.; Pang, V. F.; IVAN-CHEN CHENG ; Chang, H.W. | Taiwan Veterinary Journal | | | |
2006 | III-V MOSFET's with advanced high 庥 dielectrics | Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG | ECS Transactions | 0 | 0 | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
2007 | InGaAs n-MOS devices integrated using ALD-HfO<inf>2</inf>/metal gate without surface cleaning and interfacial layer passivation | Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG | 2007 International Semiconductor Device Research Symposium | 0 | 0 | |
2000 | The integration of 3D digitizing and LCD panel display based rapid prototyping system for manufacturing automation | Luo, R.C.; Tzou, J.H.; Chang, Y.C.; REN-CHYUAN LUO | IECON Proceedings (Industrial Electronics Conference) | 4 | 0 | |
2008 | Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al <inf>2</inf> O <inf>3</inf> as gate dielectrics | Chang, Y.C.; Chang, W.H.; Chiu, H.C.; Shiu, K.H.; Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG | Device Research Conference | 1 | 0 | |
2013 | Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al<inf>2</inf>O<inf>3</inf>as a gate dielectric on different reconstructed surfaces | Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 24 | 22 | |