公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2001 | Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction | Hang, D.R.; CHI-TE LIANG ; Huang, C.F.; Chang, Y.H.; YUAN-HUEI CHANG ; Jiang, H.X.; Lin, J.Y. | Applied Physics Letters | 38 | 36 | |
2012 | Effective passivation of In <inf>0.2</inf>Ga <inf>0.8</inf>As by HfO <inf>2</inf> surpassing Al <inf>2</inf>O <inf>3</inf> via in-situ atomic layer deposition | Chang, Y.H.; Lin, C.A.; Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 24 | |
2017 | Effective surface passivation of In<inf>0.53</inf>Ga<inf>0.47</inf>As(0 0 1) using molecular beam epitaxy and atomic layer deposited HfO<inf>2</inf> ??A comparative study | Hong, M.; Wan, H.W.; Chang, P.; Lin, T.D.; Chang, Y.H.; Lee, W.C.; Pi, T.W.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 2 | 1 | |
2011 | Electrical properties and interfacial chemical environments of in situ atomic layer deposited Al<inf>2</inf>O<inf>3</inf> on freshly molecular beam epitaxy grown GaAs | Chang, Y.H.; Huang, M.L.; Chang, P.; Lin, C.A.; Chu, Y.J.; Chen, B.R.; Hsu, C.L.; Kwo, J.; Pi, T.W.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 28 | 29 | |
2009 | Energy-band parameters of atomic layer deposited Al2O 3 and HfO2 on InxGa1-xAs | Huang, M.L.; Chang, Y.C.; Chang, Y.H.; Lin, T.D.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 73 | 71 | |
2011 | Erratum: Attainment of low interfacial trap density absent of a large midgap peak in In0.2 Ga0.8 As by Ga<inf>2</inf> O<inf>3</inf> (Gd<inf>2</inf> O<inf>3</inf>) passivation (Applied Physics Letters (2011) 98 (062108)) | Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Lin, T.D.; Chang, Y.H.; Chang, W.H.; Chang, Y.C.; Wang, W.-E.; Dekoster, J.; Hoffmann, T.Y.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
1997 | Fabrication of ZnSe quantum dots under Volmer-Weber mode by metalorganic chemical vapor deposition | Harris Liao, M.C.; Chang, Y.H.; Chen, Y.F.; Hsu, J.W.; Lin, J.M.; Chou, W.C.; YUAN-HUEI CHANG | Applied Physics Letters | 71 | | |
1997 | Fabrication of ZnSe quantum dots under Volmer-Weber mode by metalorganic chemical vapor deposition | Harris Liao, M.C.; Chang, Y.H.; Chen, Y.F.; Hsu, J.W.; Lin, J.M.; Chou, W.C.; YANG-FANG CHEN | Applied Physics Letters | 71 | | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG | Journal of Applied Physics | 3 | 4 | |
2013 | Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; SSU-YEN HUANG | Journal of Applied Physics | 3 | 4 | |
2013 | Ferromagnetism in cluster free, transition metal doped high 庥 dilute magnetic oxides: Films and nanocrystals | Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 4 | |
1998 | Formation of D- centers in GaAs/AlGaAs quantum wells | Lee, C.H.; Chang, Y.H.; Lin, H.H.; Lee, C.P.; YUAN-HUEI CHANG | Chinese Journal of Physics | 1 | | |
2004 | From localization to Landau quantization in a two-dimensional GaAs electron system containing self-assembled InAs quantum dots | Kim, G.-H.; Liang, C.-T.; Huang, C.F.; Nicholls, J.T.; Ritchie, D.A.; Kim, P.S.; Oh, C.H.; Juang, J.R.; Chang, Y.H.; YUAN-HUEI CHANG | Physical Review B - Condensed Matter and Materials Physics | 39 | | |
2009 | GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al<inf>2</inf>O<inf>3</inf> as a template followed by atomic layer deposition growth | Chang, Y.H.; Chiu, H.C.; Chang, W.H.; Kwo, J.; Tsai, C.C.; Hong, J.M.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 14 | 14 | |
2008 | Growth and characterization of CdSe nanoneedles and other one-dimensional CdSe nanostructures | Cheng, J.H.; Chao, H.Y.; Chang, Y.H.; Hsu, C.H.; Cheng, C.L.; Chen, T.T.; Chen, Y.F.; YUAN-HUEI CHANG ; YANG-FANG CHEN | Physica E: Low-Dimensional Systems and Nanostructures | 16 | 13 | |
2010 | Growth and characterization of type-II ZnO/ZnTe core-shell nanowire arrays for solar cell applications | Chao, H.Y.; Cheng, J.H.; Lu, J.Y.; Chang, Y.H.; Cheng, C.L.; Chen, Y.F.; YUAN-HUEI CHANG ; YANG-FANG CHEN | Superlattices and Microstructures | 51 | 55 | |
2000 | Growth and photoluminescence study of ZnSe quantum dots | Chang, Y.H.; Chieng, M.H.; Tsai, C.C.; Harris Liao, M.C.; Chen, Y.F.; YUAN-HUEI CHANG | Journal of Electronic Materials | 17 | | |
2012 | Growth mechanism of atomic layer deposited Al<inf>2</inf>O<inf>3</inf>on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors | Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 15 | 15 | |
2013 | High-performance self-aligned inversion-channel In<inf>0.53</inf>Ga <inf>0.47</inf>As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO<inf>2</inf> | Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 26 | 48 | |
2010 | Implementation of an efficient dielectric function into the finite difference time domain method for simulating the coupling between localized surface plasmons of nanostructures | Lu, J.Y.; Chang, Y.H.; YUAN-HUEI CHANG | Superlattices and Microstructures | 24 | 23 | |