公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2011 | Defect density reduction of the Al 2 O 3/GaAs (001) interface by using H 2 S molecular beam passivation | Merckling, C; Chang, YC; Lu, CY; Penaud, J; Brammertz, G; Scarrozza, M; Pourtois, G; Kwo, J; Hong, M; Dekoster, J; others; MINGHWEI HONG | Surface Science | | | |
2007 | Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering | Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG | Thin solid films | | | |
2003 | The diagnostic value of sensory evoked potentials in pediatric Wilson disease. | Hsu, YS; Chang, YC; Lee, WT; Ni, YH; Hsu, HY; Chang, MH. | Pediatr Neurol | | | |
2010 | Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO 2 as a gate dielectric | Chang, YC; Chang, WH; Chang, YH; Kwo, J; Lin, YS; Hsu, SH; Hong, JM; Tsai, CC; Hong, M; MINGHWEI HONG | Microelectronic Engineering | | | |
2003 | Dysphagia in patients with nasopharyngeal cancer after radiation therapy: a videofluoroscopic swallowing study. | Chang, YC; Chen, SY; Lui, LT; Wang, TG; Wang, TC; Hsiao, TY; Li, YW; Lien, IN. | Dysphagia | | | |
2006 | The Effect of Nasogastric Tubes on Swallowing Function in Persons With Dysphagia Following Stroke. | Wang, TG; Wu, MC; Chang, YC; Hsiao, TY; Lien, IN. | Arch Phys Med Rehabil | | | |
2010 | Effective reduction of interfacial traps in Al 2 O 3/GaAs (001) gate stacks using surface engineering and thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Wang, WE; Dekoster, J; Meuris, M; Caymax, M; Heyns, M; Kwo, J; others; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2009 | Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ As | Huang, ML; Chang, YC; Chang, YH; Lin, TD; Hong, M; Kwo, J; MINGHWEI HONG | Bulletin of the American Physical Society | | | |
2006 | Energy-band parameters of atomic-layer-deposition Al̃ 2Õ 3/InGaAs heterostructure | Huang, ML; Chang, YC; Chang, CH; Lin, TD; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2010 | Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3 (Gd2O3)/In0. 2Ga0. 8As | Wu, YD; Lin, TD; Chiang, TH; Chang, YC; Chiu, HC; Lee, YJ; Hong, M; Lin, CA; Kwo, J; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |
2007 | Factors influencing the successful treatment of infectious pulmonary tuberculosis. International | Chung, WS; Chang, YC; Yang, MC | Journal of Tuberculosis and Lung Disease | | | |
2005 | Finding of videofluoroscopic swallowing studies are associated with tube feeding dependency at discharge in stroke patients with dysphagia. | Lin, YN; Chen, SY; Wang, TG; Chang, YC; Chie, WC; Lien, IN. | Dysphagia | | | |
2005 | Findings of videofluoroscopic swallowing studies are associated with tube feeding dependency at discharge in stroke patients with dysphagia. | Lin, YN; Chen, SY; Wang, TG; Chang, YC; Chie, WC; Lien, IN | Dysphagia | | | |
2010 | Great reduction of interfacial traps in Al 2 O 3/GaAs (100) starting with Ga-rich surface and through systematic thermal annealing | Chang, YC; Merckling, C; Penaud, J; Lu, CY; Brammertz, G; Wang, WE; Hong, M; Kwo, J; Dekoster, J; Caymax, M; others; MINGHWEI HONG | Device Research Conference 2010 | | | |
2011 | H 2 S molecular beam passivation of Ge (001) | Merckling, C; Chang, YC; Lu, CY; Penaud, J; El-Kazzi, M; Bellenger, F; Brammertz, G; Hong, M; Kwo, J; Meuris, M; others; MINGHWEI HONG | Microelectronic Engineering | | | |
2009 | High $κ$ dielectric single-crystal monoclinic Gd 2 O 3 on GaN with excellent thermal, structural, and electrical properties | Chang, WH; Lee, CH; Chang, P; Chang, YC; Lee, YJ; Kwo, J; Tsai, CC; Hong, JM; Hsu, C-H; Hong, M; MINGHWEI HONG | Journal of Crystal Growth | | | |
2013 | High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 | Lin, TD; Chang, WH; Chu, RL; Chang, YC; Chang, YH; Lee, MY; Hong, PF; Chen, Min-Cheng; Kwo, J; Hong, M; MINGHWEI HONG | Applied Physics Letters | | | |
2006 | III-V MOSFET's with Advanced High k Dielectrics | Hong, Minghwei; Kwo, J Raynien; Chen, CP; Chang, YC; Huang, ML; Lin, CF; MINGHWEI HONG | ECS Transactions | | | |
2012 | InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics | Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG | Journal of Vacuum Science & Technology B | | | |