公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2007 | Depletion-mode GaAs-based MOSFET with Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) as a gate dielectric | Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 11 | 12 | |
2011 | Direct determination of flat-band voltage for metal/high κ oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C.-L.; Lee, W.C.; Chu, L.K.; Hong, M.; Kwo, J.; Chang, Y.-M. | Applied Physics Letters | 2 | 3 | |
2011 | Direct determination of flat-band voltage for metal/high 庥 oxide/semiconductor heterointerfaces by electric-field-induced second-harmonic generation | Chang, C.-L.; Lee, W.C.; Chu, L.K.; Hong, M.; Kwo, J.; Chang, Y.-M.; MINGHWEI HONG | Applied Physics Letters | 2 | 3 | |
2010 | Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-庥 dielectrics on Ge without interfacial layers | Chu, L.K.; Chu, R.L.; Lin, T.D.; Lee, W.C.; Lin, C.A.; Huang, M.L.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Solid-State Electronics | 27 | 26 | |
2011 | Electronic structures of Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) gate dielectric on n-Ge(001) as grown and after CF <inf>4</inf> plasma treatment: A synchrotron-radiation photoemission study | Pi, T.-W.; Lee, W.C.; Huang, M.L.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Applied Physics | 3 | 3 | |
2009 | Ga2O3(Gd2O3) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices | Chu, L.K.; Lin, T.D.; Huang, M.L.; Chu, R.L.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Applied Physics Letters | 31 | 31 | |
2009 | High performance Ga<inf>2</inf>O<inf>3</inf>(Gd<inf>2</inf>O <inf>3</inf>)/Ge MOS devices without interfacial layers | Chu, L.K.; Chu, R.L.; Huang, M.L.; Tung, L.T.; Lin, T.D.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | 39th European Solid-State Device Research Conference | 0 | 0 | |
2011 | High-resolution core-level photoemission study of CF <inf>4</inf> -treated Gd <inf>2</inf> O <inf>3</inf> (Ga <inf>2</inf> O <inf>3</inf> ) gate dielectric on Ge probed by synchrotron radiation | Pi, T.-W.; Huang, M.L.; Lee, W.C.; Chu, L.K.; Lin, T.D.; Chiang, T.H.; Wang, Y.C.; Wu, Y.D.; Hong, M.; Kwo, J.; MINGHWEI HONG | Applied Physics Letters | 11 | 10 | |
2010 | InGaAs and Ge MOSFETs with a common high 庥 gate dielectric | Lee, W.C.; Lin, T.D.; Chu, L.K.; Chang, P.; Chang, Y.C.; Chu, R.L.; Chiu, H.C.; Lin, C.A.; Chang, W.H.; Chiang, T.H.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology | 1 | 0 | |
2011 | InGaAs and Ge MOSFETs with high 庥 dielectrics | Lee, W.C.; Chang, P.; Lin, T.D.; Chu, L.K.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 10 | 9 | |
2011 | Low interfacial trap density and sub-nm equivalent oxide thickness in In<inf>0.53</inf>Ga<inf>0.47</inf>As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO<inf>2</inf>/Al<inf>2</inf>O<inf>3</inf> as gate dielectrics | Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG | Applied Physics Letters | 59 | 56 | |
2009 | Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y<inf>2</inf>O<inf>3</inf> on Ge | Chu, L.K.; Lee, W.C.; Huang, M.L.; Chang, Y.H.; Tung, L.T.; Chang, C.C.; Lee, Y.J.; Kwo, J.; Hong, M.; MINGHWEI HONG | Journal of Crystal Growth | 44 | 40 | |
2009 | Metal-oxide-semiconductor devices with UHV-Ga <inf>2</inf> O <inf>3</inf> (Gd <inf>2</inf> O <inf>3</inf> ) on Ge(100) | Chu, L.K.; Lin, T.D.; Lee, C.H.; Tung, L.T.; Lee, W.C.; Chu, R.L.; Chang, C.C.; Hong, M.; Kwo, J.; MINGHWEI HONG | International Symposium on VLSI Technology, Systems, and Applications, Proceedings | 0 | 0 | |
2009 | Molecular beam epitaxy-grown Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> high-庥 dielectrics for germanium | Lee, W.C.; Chin, B.H.; Chu, L.K.; Lin, T.D.; Lee, Y.J.; Tung, L.T.; Lee, C.H.; Hong, M.; Kwo, J.; MINGHWEI HONG | Journal of Crystal Growth | 17 | 18 | |
2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high 庥 gate dielectric using a CMOS compatible process | Fu, C.H.; Lin, Y.H.; Lee, W.C.; Lin, T.D.; Chu, R.L.; Chu, L.K.; Chang, P.; Chen, M.H.; Hsueh, W.J.; Chen, S.H.; Brown, G.J.; Chyi, J.I.; Kwo, J.; Hong, M.; MINGHWEI HONG | Microelectronic Engineering | 15 | 15 | |
2008 | Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition | Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 5 | 5 | |