公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
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2015 | Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high $κ$ gate dielectric using a CMOS compatible process | Fu, CH; Lin, YH; Lee, WC; Lin, TD; Chu, RL; Chu, LK; Chang, P; Chen, MH; Hsueh, WJ; Chen, SH; others; MINGHWEI HONG | Microelectronic Engineering |