公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
---|---|---|---|---|---|---|
2021 | Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure | Chen D et al.; Cai S; Hsu N.-W; Huang S.-H; Chuang Y; Nielsen E; JIUN-YUN LI ; CHEE-WEE LIU ; Lu T.M; Laroche D. | Applied Physics Letters | 0 | 1 | |
2021 | Electron Mobility Enhancement in GeSn n-Channel MOSFETs by Tensile Strain | Chuang Y; Liu C.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | IEEE Electron Device Letters | 13 | 11 | |
2021 | High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures | Liu C.-Y; Chuang Y; Tai C.-T; Kao H.-S; Tien K.-Y; Li J.-Y.; JIUN-YUN LI | LEOS Summer Topical Meeting | 1 | 0 | |
2021 | Schottky Barrier Height Modulation of Metal/n-GeSn Contacts Featuring Low Contact Resistivity by in Situ Chemical Vapor Deposition Doping and NiGeSn Alloy Formation | Chuang Y; Liu C.-Y; Kao H.-S; Tien K.-Y; Luo G.-L; Li J.-Y.; JIUN-YUN LI | ACS Applied Electronic Materials | 10 | 8 |