| Issue Date | Title | Author(s) | Source | scopus | WOS | Fulltext/Archive link |
| 2006 | Anisotropic Properties of GaN Studied by Raman Scattering | Lin, H.C.; Feng, Z.C.; Chen, M.S.; Shen, Z.X.; Lu, W.; Collins, W.E. | Materials Science Forum 527-529: | | | |
| 2006 | A comparative study of high resolution transmission electron microscopy, atomic force microscopy and infrared spectroscopy for GaN thin films grown on sapphire by metalorganic chemical vapor deposition | Feng, Zhe Chuan; Li, Kun; Hou, Yun Tian; Zhao, Jie; Lu, W.; Collins, W.E. | Surface and Coatings Technology | | |  |
| 2006 | Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition | Feng, Zhe Chuan; Huang, C.W.; Chang, W.Y.; Zhao, Jie; Tin, Chin Che; Lu, Wei Jie; Collins, W.E. | Materials Science Forum | | |  |
| 2006 | Optical and material properties of sandwiched Si/SiGe/Si heterostructures | Feng, Z.C.; Yu, J.W.; Zhao, J.; Yang, T.R.; Karunasiri, R.P.G.; Lu, W.; Collins, W.E. | Surface and Coatings Technology | | | |
| 2005 | P-type doping in GaN through Be implantation | Feng, Z.C.; Sun, Y.J.; Tan, L.S.; Chua, S.J.; Yu, J.W.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG | Physica Status Solidi C: Conferences | 2 | 0 | |
| 2005 | Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition | Feng, Z.C.; Liu, W.; Chua, S.J.; Chen, J.H.; Yang, C.C.; Lu, W.; Collins, W.E.; CHIH-CHUNG YANG | Physica Status Solidi C: Conferences | 2 | 0 | |
