公開日期 | 標題 | 作者 | 來源出版物 | scopus | WOS | 全文 |
2009 | GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer | Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN | Applied Physics Letters | 2 | 2 | |
2002 | GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs | W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN | Electronics Letters | 1 | 1 | |
2013 | GaAsPSb and its application to heterojunction bipolar transistors | Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN | 40th international symposium on compound semiconductors (ISCS 2013) | | | |
2005 | GaAsSb/GaAs quantum wells grown by MBE | H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
2003 | GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser | H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN | Sixth Chinese Optoelectronics Symposium | 0 | 0 | |
2003 | GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers | H. H. Lin,; P. W. Liu,; G. H. Liao,; HAO-HSIUNG LIN | electron devices and materials symposium | | | |
2004 | GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes | H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN | MBE Taiwan | | | |
2006 | GaAsSbN grown on GaAs by gas source molecular beam epitaxy | T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2006 and high K materials workshop | | | |
2008 | GaAsSbN/GaAs long wavelength PIN detectors | C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | 20th International Conference on Indium Phosphide and Related Materials | 4 | 0 | |
2013 | Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate | H. M. Wu,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN | TACT 2013 international thin films conference | | | |
2002 | Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser | P.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN | The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society | 0 | 0 | |
1999 | Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy | J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN | Optics and Photonics/Taiwan'99 | | | |
2010 | In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor | Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN | IEEE Electron Device Letters | 2 | 2 | |
2003 | InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy | F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN | Electron devices and materials symposium | | | |
2005 | InAs/InGaAs/GaAs coupled quantum-dot laser | C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN | MBE Taiwan 2005 | | | |
2001 | InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m | Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN | Electronics Letters | 33 | 37 | |
2001 | InAsN Grown by Plasma-assisted Gas Source MBE | D. K. Shih,; H. H. Lin,; T. Y. Chu,; T. R. Yang,; HAO-HSIUNG LIN | 2001 MRS Fall meeting, Symposium H | | | |
1999 | InAsN quantum wells grown on InP by gas source MBE | J. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN | 3rd international conference on mid-infrared optoelectronics materials and devices | | | |
1999 | InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy | J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN | 1999 Electron Devices and Materials Symposia | | | |
2006 | InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy | G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN | 14th international conference on molecular beam epitaxy | | | |